Schottky diyot parametrelerini belirlemede kullanılan metotların geniş bir sıcaklık aralığı için kıyaslanması
50 nm Schottky kontak kalınlığına sahip Ni/n-GaAs Schottky diyotlarının akım-gerilim (I-V) verileri 60 K’den 320 K’e kadar olan geniş bir sıcaklık aralığında ölçüldü. Ni/n-GaAs Schottky diyotlarının önemli kontak parametreleri geleneksel I-V metodu, Norde metodu, genelleştirilmiş Norde metodu ve Cheung fonksiyonları kullanılarak her bir sıcaklık değeri için ayrı ayrı elde edildi. Daha sonra sonuçlar birbirleriyle kıyaslandı.
The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range
The current-voltage (I-V) data of Ni/n-GaAs Schottky diodes with 50 nm Schottky metal thickness has beenmeasured in the temperature range of 60 K to 320 K. The important contact parameters of Ni/n-GaAsSchottky diodes have been obtained by using conventional I-V method, Norde method, generalized Nordemethod, and Cheung functions for each temperature. Then, the results have been compared each other.
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