CVD VE PECVD TEKNİĞİ KULLANILARAK BAKIR FOLYOLAR ÜZERİNDE GRAFEN NANOYAPILARIN ELDE EDİLMESİ VE KARAKTERİZASYONU

Bu çalışmada, CH4 gazı kullanılarak bakır folyolar üzerinde grafen ince filmlerin sentezlenmesi amaçlanmıştır. İnce filmlerin elde edilebilmesi için plazma destekli kimyasal buhar biriktirme (PECVD) ve kimyasal buhar biriktirme (CVD) yöntemi kullanılmıştır. Bakır alt-taşlar, standart ön temizlik yapıldıktan sonra kuvars camdan yapılmış reaktöre yerleştirilmiştir. Vakum odasının taban basıncı 5-10 mTorr’a düşürüldükten ve hidrojen gazı ile tavlama işlemi yapıldıktan sonra, CH4 gazı ortama gaz akış kontrol ünitesi yardımıyla gönderilmiştir. PECVD sisteminde; RF güç kaynağı (13,56 MHz), kontrol ünitesi vasıtasıyla aktif hale getirilerek, üretilen enerji ortama gönderilmiştir. İşlem basıncı 100 mTorr, sıcaklık 600 ˚C, RF gücü 50 W ve kaplama süresi ise 20 dakika olarak ayarlanmıştır. CVD tekniğinde ise, RF gücü ortadan kaldırılmış ve büyütme sıcaklığı 1000 ˚C olarak belirlenmiştir. Elde edilen Grafen nanoyapıların karakterizasyonu için Raman, SEM ve TEM analizleri gerçekleştirilmiştir. Raman sonuçlarına göre, CVD yöntemiyle elde edilen yapılar, tek tabaka grafen yapısını doğrulamıştır. Bununla beraber PECVD tekniği ile tek tabaka grafen nanoyapılardan ziyade çok tabakalı yapı elde edildi.

Anahtar Kelimeler:

PECVD, CVD, Grafen, İnce Film

FABRICATION AND CHARACTERIZATION OF GRAPHENE NANOSTRUCTURE ON COPPER FOILS USING CVD AND PECVD TECHNIQUE

In this study, it was aimed to synthesize graphene thin films on copper foils using CH4 gas. Plasma enhanced chemical vapor deposition (PECVD) and chemical vapor deposition (CVD) method were used to obtain thin films. Copper foils were placed in quartz reactor chamber after standard pre-cleaning. Then, the base pressure of the vacuum chamber was lowered to 5-10 mTorr. The foils was annealed with hydrogen gas and CH4 gas was sent to the chamber by means of gas flow controller. In PECVD system; RF power supply (13.56 MHz) was activated by the control unit and the plasma was be formed with generated energy. The deposition pressure was set to 100 mTorr, substrate temperature was 600 ˚C, RF power was 50 W and deposition time was 20 minutes. In the CVD technique, the RF power was eliminated and the deposition temperature was determined as 1000 ˚C. Raman, SEM and TEM analysis were performed for the characterization of the obtained graphene nanostructures. According to the results of Raman, the thin film obtained by the CVD method confirmed the single-layer graphene. However, single-layer graphene could not be obtained by PECVD technique.

Keywords:

PECVD, CVD, Graphene, Thin Film,

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