Al/CdZnO/p-Si (MIS) Yapısının Voltaja Bağlı Arayüzey Durumlarının ve Bu Durumların Gevşeme Sürelerinin Admitans Metodu İle İncelenmesi

Al/CdZnO/p-Si (MIS) yapısının voltaja bağlı arayüzey durumları / tuzakları (Nss) ve bu durumların gevşeme süreleri () 5 kHz-1 MHz frekans aralığındaki C-V-f ve G/-V-f ölçümleri kullanılarak admitans yöntemi ile incelenmiştir. Hem C hem de G/ değerleri voltaj ve frekansın güçlü bir fonksiyonu olarak bulundu ve bu değerler hemen hemen her voltaj için azalan frekansla artar. Düşük frekanslarda elde edilen daha yüksek C ve G değerleri, CdZnO/p-Si arayüzeyi arasında yer alan Nss varlığından kaynaklanmaktadır. Düşük frekanslarda, tuzaklardaki yüklerin gevşeme süresi uygulanan ac sinyalin periyodundan (≥T) daha büyüktür, bu nedenle ölçülen C ve G/ değerlerine katkıda bulunabilirler. Ayrıca, Nss varlığı yapının hesaplanan paralel iletkenlik (Gp/)-Lnf eğrilerinde bir pike neden olur. Böylece, hem Nss hem de  değerleri, sırasıyla pik değerinden ve pikin konumundan hesaplandı. Nss ve  değerleri, sırasıyla 1.7 V’da 1.65x1013 eV-1 cm-2, 31.4s ve 3 V’da 1.39x1013 eV-1 cm-2, 9.18 s arasında değişmiştir. Bu değerler oda sıcaklığında bu yapılar için çok uygundur.

Anahtar Kelimeler:

Admitans metodu, Arayüzey durumları, Gevşeme süresi, Al/CdZnO/p-Si (MIS) tip yapılar

Investigation of the Voltage Dependent Surface States and Their Relaxation Time of the Al/CdZnO/p-Si (MIS) Structure Via Admittance Method

The voltage dependent surface states/traps (Nss) and their relaxation time () of the Al/CdZnO/p-Si (MIS) structure were investigated with admittance method using C-V-f and G/-V-f measurements in the frequency range of 5 kHz-1 MHz. Both the values of C and G/ were found as strong function of voltage and frequency and they increase with decreasing frequency almost for each voltage. The obtained higher values of C and G at the low frequencies are due to the presence of Nss located between CdZnO/p-Si interfaces. At low frequencies, the relaxation time of the charges at the traps is larger than the period (≥T) of the applied ac signal, so they can contribute to the measured C and G/ values. In addition, the presence of Nss causes a peak at the extracted parallel conductance (Gp/) versus Lnf curves of the structure. Thus, both the values of Nss and  were calculated from the peak value and its position, respectively. The values of Nss and  ranged from 1.65x1013 eV-1 cm-2, 31.4 s at 1.7 V and 1.39x1013 eV-1 cm-2, 9.18 s at 3 V, respectively. These values are very suitable for these structures at room temperature.

Keywords:

Admittance method, Surface states, Relaxation time, Al/CdZnO/p-Si (MIS) type structures,

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