The Impact of the Different Voltages and Frequencies on Resistivity ofthe $TiO_2$-based Memristors with 3D Observation in MATLAB

Memristor is the fourth fundamental element that was theoretically discovered about 40 years ago by Professor Leon Chua and wasintroduced alongside three other existing elements (resistor, capacitor and inductor) in the electronic world. Until recently, however,the construction of a physical example of this had not yet taken place. Finally, in 2008, HP introduced a nanometer-sized $TiO_2$ structurewith predictable memory behavior and hysteresis. In this paper, after introducing the general characteristics and structure of thememristor, a 3D MATLAB model with nonlinear ion deflection for the titanium dioxide memristor made by HP with current or voltagecontrol capability is presented. By setting the model parameters for the specifications of this memory, some simulations are performedand the results are displayed.

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