The Effect of Interface States and Series Resistance on Current‐Voltage Characteristics in (MIS) Schottky Diodes

Metal‐Yalıtkan‐Yarıiletken (MYY) Al/Si3N4/p‐Si Schottky engel diyotlarının akım‐voltaj (I‐V) karakteristikleri oda sıcaklığında ölçüldü. Al/Si3N4/p‐Si yapılar elektrokimyasal anodizasyon metodu ile üretilmiştir. p tipi silisyumun yüzeyi nitridasyon işlemiyle pasive edildi. Akım‐Voltaj karakteristikleri üzerine arayüzey durum yoğunluğu (Nss) ,arayüzey tabakası ve seri direncin etkileri incelendi. Al/Si3N4/p‐ Si (MIS) Schottky engel diyotlar, Al/p‐Si arayüzey tabakasındaki Si3N4 varlığı yüzünden ideal Schottky diyotlar yerine, idealite faktör değerinin 6.17 ve engel yüksekliği değerinin 0.714 eV olmasıyla doğrultucu davranış göstermesi, (MIS) metal‐ arayüzey tabakası‐ yarıiletken yapısına uyar. Seri direncin ( Rs ) değerleri Cheung in metodu kullanılarak tanımlandı. Buna ilave olarak, (Ess‐Ev) nin bir fonksiyonu olarak, arayüzey durumlarının yoğunluğu ( Nss), seri direncin hesaba katıldığı ve katılmadığı I‐V ölçümlerinden elde edildi. I‐V karakteristikleri; Nss dağılımı , Rs ve arayüzey yalıtkan tabakanın, MIS Schottky diyotların elektriksel karakteristiklerini etkileyen önemli parametreler olduğunu doğrulanmıştır.

(MYY) Schottky Diyotlarda Akım‐Voltaj Karakteristikleri Üzerine Seri Direnç ve Arayüzey Durumlarının Etkisi

The current‐voltage (I‐V) characteristics of metal‐insulator‐semiconductor (MIS) Al/Si3N4/p‐Si Schottky barrier diodes (SBDs) were measured at room temperature. Al/Si3N4/p‐Si structure has been fabricated by the electrochemical anodization method. The surface of p‐type Si was passivated by nitridation process. Effects series resistance Rs , interfacial layer and interface states density (Nss) on I‐V characteristics were investigated. Al/Si3N4/p‐Si (MIS) Schottky barrier diodes showed that rectifying behavior with an ideality factor value of 6.17 and barrier height value of 0.714 eV obeys a metal‐ interfacial layersemiconductor (MIS) structure rather than an ideal Schottky diode due to the existence of Si3N4 at the Al/p‐Si interfacial layer. The values of series resistance ( Rs ) were determined using Cheung s method. In addition, interface states density ( Nss) as a function of (Ess‐Ev) was extracted from the bias I‐V measurements with and without taking into account the series resistance. The I‐V characteristics confirmed that the distribution of Nss , Rs and interfacial insulator layer are important parameters that influence the electrical characteristics of MIS Schottky diodes.

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