hBN-SiC kompozitlerde sıcaklığın SiC tane boyutuna etkisi
Bu çalışmada hekzagonal bor nitrür- silisyum karbür (hBN-SiC) kompozit sentezinde sıcaklığın SiC tane boyutu üzerine etkisi araştırılmıştır. Numunelerin SPS ile 1700oC, 1800oC, 1900oC ve 2000oC’de farklı sıcaklıklarda 50MPa basınç altında 15dak sinterleme işlemi gerçekleştirilmiştir. Sinterleme sıcaklığının SiC tane boyutu üzerine etkisinin belirlenmesi için İmageJ programı ile tane boyut ölçümleri gerçekleştirilerek normal dağılım fonksiyonu ile tane boyut dağılımları tespit edilmiştir. 1700oC’den 1900oC’ye sıcaklık artırıldığında h-BN miktarında %0,9’luk bir artış gözlenmiştir ve 2000oC’de ise değişmemiştir. SiC ortalama tane boyutu 1700oC’den 2000oC’ye sıcaklık artırıldığında 1,09μm’den 1,96μm’ye artmıştır. Tane boyut dağılımlarının standart sapma değerleri ise 1700oC’de 0,445 iken 2000oC’de 0,812 değerine arttığı gözlenmiştir. Sıcaklığa bağlı olarak tane boyut dağılımı artmaktadır. hBN fazının güçlü kovalent bağları ve plaka şeklinde yapıya sahip olmasından dolayı hBN’nin zayıf sinterlenebilitesi nedeniyle SiC tane büyümesini yavaşlattığı söylenebilir.
Effect of temperature on SiC grain size in hBN-SiC composites
In this study, the effect of temperature on the SiC grain size was investigated in the synthesis of hexagonal boron nitride-silicon carbide (hBN-SiC) composites. Samples were sintered at 1700oC, 1800oC, 1900oC and 2000oC, under 50MPa pressure for 15 minutes by spark plasma sintering (SPS). In order to determine the effect of sintering temperature on the SiC grain size, grain sizes were measured by ImageJ program. Grain size distributions were determined by using normal distribution function. When the temperature was increased from 1700°C to 1900°C, the amount of h-BN increased by 0.9% and remained unchanged at 2000°C. When the temperature was increased from 1700°C to 2000°C, the average grain size of SiC increased from 1.9 μm to 1.96 μm. The standard deviation values of grain size distribution increased from 0,445 at 1700°C to 0,812 at 2000°C. Depending on the temperature, the grain size distribution has increased. Due to the strong covalent bonds and plate-like structure of hBN, it has poor sinterability. Because of this feature, it can be said that the growth of SiC grains is slowed down by hBN.
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