Saliha ILICAN, Yasemin ÇAĞLAR, Müjdat ÇAĞLAR

CdZnS ve ZnO yarıiletken filmlerinin yasak enerji aralıkları

II-VI bileşik yarıiletkenleri çeşitli elektro-optik aygıtlardaki uygulamalarından dolayı oldukça önemlidir. Bu filmler çeşitli opto-elektronik aygıtlarda etkin olarak kullanılmaktadırlar. Bu çalışmada, CdZnS ve ZnO filmleri püskürtme (spray pyrolysis) yöntemi ile farklı koşullarda elde edilmiştir. Filmlerin optik özellikleri incelenmiştir. Bu filmlerin yasak enerji aralıkları, 200-900nm dalgaboyu bölgesindeki soğurma spektrumları ile belirlenmiştir. Bu filmler doğrudan bant aralığına sahip olup, yasak enerji aralıkları $CdZnS^a$ filmi için 2.90eV, $CdZnS^b$ filmi için 2.97eV ve ZnO filmi için de 3.11eV olarak bulunmuştur.

II-VI compound semiconductors are of great importance due to their applications in various electro-optic devices. These films have been utilized effectively in various opto-electronic devices. In this study, CdZnS and ZnO films have been prepared in different deposition conditions by the spray pyrolysis method. The optical properties of these films have been investigated. The band gap of these films is studied by absorption spectra in the wavelength range of 200-900 nm. These films have a direct band gap, which are 2.90eV for $CdZnS^a$ film, 2.97eV for $CdZnS^b$ film and, 3.11eV for ZnO film.

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