The Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 Khz

The Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 Khz

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi

2019-Cilt: 9 - Sayı: 4

2062-2069

Au/PPy/n-Si (MPS), Temperature and frequency dependent reverse bias C-V characteristics, Arrhenius plot and activation energy

Temperature and frequency dependent reverse bias C-V characteristics, Au/PPy/n-Si (MPS), Arrhenius plot and activation energy

4521

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