Voltage Dependent Barrier Height, Ideality Factor and Surface States in Au/(NiS-PVP)/n-Si (MPS) type Schottky Barrier Diodes

Metal-Polymer-Semiconductor (MPS) Schottky Barrier Diodes (SBD) were manufactured and their basic electrical parameters were obtained by the measurement of the forward and reverse bias current-voltage (I-V) in the wide bias voltage range (±3V) to determine the voltage dependent effects on Nickel-Sulphur (NiS) doped Poly Vinyl Pyrrolidone (PVP) polymer interlayer. The saturation current (I0), zero-bias barrier height (ΦB0), rectifying rate (RR), ideality factor (n) and the real value of series - shunt resistances (Rs - Rsh) were calculated. The voltage dependent profile of n (V), ΦB(V), and Rs (V) were derived. The forward bias ln I-V plot of the MPS type SBD indicates a good rectifier behaviour and it has two distinctive linear parts with different slopes which correspond to low (0.288 ≤V ≤0.625 V) and moderate (0.672 ≤ V ≤ 0.960 V) bias voltages and then deviates from linearity due to Rs and interlayer at high forward bias voltages. Energy dependent profile of Nss was obtained from the forward bias I-V data by considering voltage dependent barrier height (ΦB) and n. Nss plot represents U-shape behaviour in the forbidden bandgap. The mean value of Nss was found at about 7.0x1012 eV-1 cm-2 and this value is in the acceptable limit for a semiconductor device and such lower values of Nss are the consequences of the passivation effect on the surface states.

Anahtar Kelimeler:

MPS type SBD, Voltage dependent barrier height, Series resistance, Surface states, Double exponential I-V behavior

Voltage Dependent Barrier Height, Ideality Factor and Surface States in Au/(NiS-PVP)/n-Si (MPS) type Schottky Barrier Diodes

Keywords:

MPS type SBD, Voltage dependent barrier height, Series resistance, Surface states, Double exponential I-V behaviour,

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Akhlaghi EA, Badali Y, Altindal S, Azizian-Kalandaragh Y, 2018. Preparation of mixed Copper/PVA nanocomposites as an interface layer for fabrication of Al/Cu-PVA/p-Si Schottky structures. Physica B-Condensed Matter, 546: 93-98.
Alptekin S, Altindal S, 2019. Comparative study on current/capacitance: Voltage characteristics of Au/n-Si (MS) structures with and without PVP interlayer. Journal of Materials Science: Materials in Electronics, 30: 6491-6499.
Altindal Yeriskin S, Balbaşi M, Orak I, 2017. The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature. Journal of Material Science: Material Electronics, 28: 14040–14048.
Altindal Yerişkin S, 2019. The investiagtion of effects of (Fe2O4-PVP) organic interlayer, surface states, and series resistance on the electrical characteristics and sources of them. Journal of Materials Science Materials in Electronics, 30: 17032-17039.
Badali Y, Nikravan A, Altindal S, Uslu I, 2018. Effects of a thin Ru-doped PVP interface layer on electrical behaviour of Ag/n-Si structures. Journal of Electronic Materials, 47: 3510-3520.
Bohlin KE, 1986. Generalized Norde plot including determination of the ideality factor. Journal of Applied Physics, 60: 1223.
Card HC, Rhoderick EH, 1971. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. Journal of Physics D: Applied Physics, 4: 1589–1601.
Cheung SK, Cheung NW, 1986. Extraction of Schottky diode parameters from forward current-voltage characteristics. Applied Physics Letters, 49: 85.
Demirezen S, Altindal S, Uslu I, 2013. Two diodes model and illumination effect on the forward and reverse bias I-V and C-V characteristics of Au/(PVA)(Bi-doped)/n-Si photodiode at room temperature. Current Applied Physics, 13: 53-59.
Eroglu A, Demirezen S, Kalandaragh YA, Altindal S, 2020. A comparative study on the electrical properties and conduction mechanisms of Au/n Si Schottky diodes with/without an organic interlayer. Journal of Materials Science: Materials in Electronics 31: 14466-14477.
Guçlu CS, Ozdemir AF, Altindal S, 2016. Double exponential I–V characteristics and double gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range. Applied Physics A, 122: 1032.
Guttler HH, Werner JH, 1990. Influence of barrier inhomogeneities on noise at Schottky contacts. Applied Physics Letters, 56: 1113-1115.
Hudait MK, Venkateswarlu KP, Krupanidhi SB, 2001. Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures. Solid-State Electronics, 45: 133-141.
Kaya A, Alialy S, Demirezen S, Balbaşi M, Altindal Yerişkin S, Aytimur A, 2016. The investigation of dielectric properties and ac conductivity of Au/GO-doped PrBaCoO nanoceramic/n-Si capacitors using impedance spectroscopy method. Ceramics International, 42: 3322-3329.
Lee JS, Choi KH, Ghim HD, Kim SS, Chun DH, Kim HY, Lyoo WS, 2004. Role of molecular weight of atactic poly(vinyl alcohol) (PVA) in the structure and properties of PVA nanofabric prepared by electrospinning, Journal of Applied Polymer Science. 93: 1638-1646.
Nicollian EH, Brews JR, 1982. MOS (Metal Oxide Semiconductor) Physics and Technology, Wiley, New York.
Orak I, Kocyigit A, 2016. The electrical characterization effect of insulator layer between semiconductor and metal. Igdir University Journal of the Institute of Science and Technology, 6: 57-67.
Rhoderick EH, Williams RH, 1988. Metal Semiconductor Contacts. Second Edition, Oxford. 257-267.
Schmitsdorf RF, Kampen TU, Monch W, 1995. Correlation between barrier height and interface structure of Ag/ Si (111) Schottky diodes. Surface Science, 324: 249-256.
Sze SM, 1981. Physics of Semiconductor Devices. Second Edition, New York, 362-380.
Tataroglu A, 2013. Comparative study of the electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes. Chinese Physics B, 22: 068402.
Tataroglu A, Altindal S, Kalandaragh YA, 2020. Comparison of electrical properties of MS and MPS type diodes in respect of (In2O3-PVP) interlayer. Physica B, 576: 411733.
Tung RT, 2001. Formation of an electric dipole at metal-semiconductor interfaces. Physical Review B, 64: 205310.
Tung RT, 2001. Recent advances in Schottky barrier concepts. Material Science and Engineering R-Reports, 35: 1.
Ulusan AB, Tascioglu İ, Tataroglu A, Yakuphanoglu F, Altindal S, 2019. A comparative study on the electrical and dielectric properties of Al/Cd doped ZnO/p Si structures. Journal of Materials Science: Materials in Electronics, 30: 12122-12129.