Düşük Frekanslarda Ag/GO- NiO/p-Si/Al Yapısının Frekans ve Voltaja Bağlı Özellikleri

Bu çalışmada, sol-jel yöntemi ile p-tipi silisyum üzerinde NiO katkılı GO ince film kaplanmıştır. Ag/GO-NiO/p-Si/Al Schottky diyodunun dielektrik özellikleri oda sıcaklığında ve karanlıkta, 10 kHz-50 kHz-100 kHz düşük frekans aralığında iletkenlik-voltaj (G/ω-V)ölçümleri ve kapasitans-voltaj (C-V) ölçümlerinden yararlanılarak araştırıldı.G/ω-V ölçümleri ve C-V ölçümlerinden elde edilen deneysel sonuçlardan, Ag/ GO-NiO/p-Si/Al yapısının seri dirençleri (Rs) ve arayüzey durum yoğunlukları (Nss) hesaplanmıştır. Artan frekansla Nss ve Rs değerlerinin azaldığı görülmüştür. Çıkan sonuçlara göre elde edilen Ag/GO-NiO/p-Si/Al yapısının diyot özelliği gösterdiği görülmüştür. Çıkan sonuçlar göz önüne alınarak Ag/GO-NiO/p-Si/Al yapısının dielektrik parametreleri; dielektrik sabiti (ε'), dielektrik kaybı (ε''), kayıp tanjantı (tanδ) ve AC elektrik iletkenliği (σac) hesaplanmıştır. Sonuçlara göre ε', ε'',tanδ ve σac değerleri düşük frekanslarda artan frekansla azalmıştır. Elde edilen bulgular, ε', ε'', tanδ ve σac'nin frekansa bağlı olduğunu güçlü bir şekilde göstermiştir. Elde edilen sonuçların tamamı literatür çalışmalarıyla uyum içinde olduğu görülmüştür.

Anahtar Kelimeler:

Schottky diyot, GO-NiO, Arayüzey tabakası

Frequency and Voltage Dependent Properties of Ag/GO-NiO/p-Si/Al Structure at Low Frequencies

In this study, NiO doped GO thin film was coated on p-type silicon by sol-gel method.The dielectric properties of Ag/GO-NiO/p-Si/Al Schottky diode were determined from conductivity-voltage (G/ω-V) measurements and capacitance-voltage (C-V) measurements in the low frequency of 10 kHz-50 kHz-100 kHz at room temperature and in the dark. The interfacial state densities (Nss) and series resistances (Rs) was investigated using of Ag/ GO-NiO /p-Si/Al structure were calculated from the experimental results obtained from C-V measurements and G/ω-V measurements. It was observed that the values of Nss and Rs decreased with the enhancement of frequency. According to the results, it was seen that the Ag/GO-NiO/p-Si/Al structure produced showed diode property. Besides, the dielectric parameters, dielectric constant (ε'), dielectric loss (ε''), loss tangent (tanδ) and AC electrical conductivity (σac) values of the Ag/GO-NiO/p-Si/Al structure were calculated. According to the results, ε', ε'', tanδ and σac values decreased with the increment of frequency values at low frequencies. Experimental results showed that ε', ε'', tanδ and σacwere strongly dependent on frequency, and all of the results obtained were found to be in agreement with the literature studies.

Keywords:

Schottky diode, GO-NiO, interfacial layer,

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