YÜKSEK VERİMLİ KRİSTAL SİLİSYUM (c-Si) HETEROEKLEM GÜNEŞ HÜCRELERİ ÜRETİMİ VE KARAKTERİZASYONU

Tek kristalli silisyum (Si) alttaşlar üzerine ince a-Si tabakalardan oluşan c-silisyum heteroeklem teknolojisi son yıllarda fotovoltaik (FV) alanında bir çok araştırmacı ve bilim adamı tarafından çalışılan önemli bir araştırma konusudur. Silisyum heteroeklem güneş hücre teknolojisi, yüksek enerji dönüşüm verimliliği ve rekabetçi seri üretim maliyeti ile kendisini ispat etmiş ve yeni geliştirilen teknolojileri bünyesine entegre edebilme kabiliyeti ile potansiyelini ortaya koymuş bir güneş hücresi teknolojisidir Bu çalışmada, silisyum heteroeklem güneş hücrelerinin üretim aşamaları ve karakterizasyonu detaylı bir şekilde çalışılmıştır. a-Si:H incefilmlerin kalınlık, bant aralığı ve taşıyıcı yaşam süresi gibi özellikleri elipsometre, profilometre ve taşıyıcı yaşam süresi cihazı ile araştırılmış ve optimizasyonu yapılmıştır. 6 inç n-tipi c-Si alttaş üzerine büyütülen katkısız ince film tabakalı heteroeklem (heterojunction with intrinsic thin-layer, HIT) yapısı ile %19,7 verimli güneş hücresi üretilmiştir.

Anahtar Kelimeler:

Heteroeklem güneş hücresi, c-Si HIT, a-Si:H ince film, PECVD, PVD

HIGH EFFICENT c-Si HETEROJUNCTION SOLAR CELL FABRICATION AND CHARACTERIZATION

c-Silicon (c-Si) heterojunction technology consisting of thin amorphous silicon layers on monocrystalline silicon wafers is an important research topic studied by many researchers and scientist in the field of photovoltaic in recent years. Silicon heterojunction solar cell technology is a solar cell technology that has proven itself with high energy conversion efficiency, competitive industrial production cost and has the ability to integrate newly developed technologies into its structure. In this study, the fabrication stages and characterization of silicon heterojunction solar cells are studied in detail. The a-Si: H thin film properties such as thickness, bandgap, carrier lifetime of solar cells were investigated and optimized via ellipsometer, profilometer and carrier lifetime. A 19,7 % efficient solar cell was fabricated on a 6-inch n-type c-Si wafers with intrinsic amorphous thin-layer structure (c-Si HIT).

Keywords:

Heterojunction solar cell, c-Si HIT, a-Si: H thin films, PECVD, PVD,

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