ANTİMON KATKILI TiO2/n-Si METAL-YALITKAN-YARIİLETKEN DİYODUN ELEKTRİKSEL PARAMETRELERİNİN FARKLI YÖNTEMLERLE BELİRLENMESİ

Metal-yalıtkan-yarıiletken (MIS) diyotların, I-V karakteristikleri yardımıyla elde edilen parametreleri elektronik tasarımlarda önemli yer tutmaktadır. Çığ gibi büyüyen elektronik sanayisinde, değişik yöntemlerle malzeme parametrelerinin her geçen gün iyileştirilmesi ve çeşitliliğinin artması, malzemelerin karakterizasyonlarından yapılan parametre hesaplamalarında yeni metotlar bulunmasının yolunu açmıştır. Bu çalışmada, antimon katkılı TiO2/n-Si MIS diyot oluşturulmuş ve yapının idealite faktörü (n), engel yüksekliği ()ve seri direnç değeri (Rs) gibi temel elektriksel parametreleri ileri beslem I-V, Cheung fonksiyonları, Norde metodu, Bohlin metodu, Hernandez metodu ve Chattopadhyay metodu gibi farklı metotlarla hesaplanmıştır. Tüm yöntemlerden elde edilen engel yüksekliği değerlerinde iyi bir uyum gözlenirken, idealite faktörü ve seri direnç değerlerinin sırasıyla 2.74-3.42 ile 94 - 4118arasında değiştiği gözlenmiştir.

Anahtar Kelimeler:

Sb-katkılı TiO2/n-Si MIS yapı, I-V karakteristiği, Bohlin metodu, Hernandez metodu, Chattopadhyay metodu

THE DETERMINATION OF ELECTRICAL PARAMETERS OF METAL-INSULATOR-SEMICONDUCTOR DIODES BASED ON ANTIMONY-DOPED TiO2/n-Si BY DIFFERENT METHODS

Metal-insulator-semiconductor (MIS) diodes-parameters which are obtained by characteristics are very important in electronic design. In rapidly developing electronic industry, the improvements of material parameters by using various methods, hence the increasing of diversity provides to find new methods in parameter solutions, which is calculated from material characterizations. In this study, antimony doped TiO2/n-Si MIS diode was fabricated and basic electrical parameters of the device such as ideality factor (n), barrier height (), and series resistance (Rs) were determined from the forward bias I-V characteristics, Cheung functions, Norde’s method, Bohlin’s method, Hernandez’s method and Chattopadhyay’s method. While there was a good agreement for the values of barrier height obtained from all methods, the ideality factor and series resistance values vary between 2.74 - 3.42 and 94 - 4118, respectively .

Keywords:

Sb-doped TiO2/n-Si MIS structure, I-V characteristics, Bohlin’s method, Hernandez’s method, Chattopadhyay’s method,

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