1911

InSe ve InSe:Sn Yarıiletkenlerinde Farklı Tavlama Sıcaklıkları ve Süreleri için Lineer Soğurma Katsayılarının Belirlenmesi

Bu çalışmada Bridgman/Stockbarger metodu ile büyütülmüş InSe ve InSe:Sn yarıiletken kristallerinin farklı tavlama sıcaklıkları ve zamanları için lineer soğurma katsayıları incelenmiştir. Yarıiletkenlerden geçirilen 241Am’in gamma ışınları yüksek çözünürlüklü Si(Li) detektör tarafında detekte edilmiştir ve Enerji ayırımlı X-ışını Floresan Spektrometresi (EDXRFS) kullanılmıştır. InSe ve InSe:Sn yarıiletken kristallerinin lineer soğurma katsayılarının, tavlama süresi ve sıcaklığının artışıyla genelde arttığı gözlenmiştir.

Anahtar Kelimeler:

Bridgman/Stockbarger, EDXRFS, Lineer soğurma katsayısı, InSe

Determination of Linear Attenuation Coefficients for Different Annealing Temperatures and Duration in InSe and InSe:Sn Semiconductors

In this study have examined linear attenuation coefficients of InSe and InSe:Sn semiconductor crystals have been grown by using Bridgman/Stockbarger for different annealing temperature and time. Gamma rays of 241Am passed through semiconductors have been detected by a high-resolution Si(Li) detector and by using energy dispersive X-ray fluorescence spectrometer (EDXRFS). It has been observed that the linear absorption coefficients of InSe and InSe: Sn semiconductor crystals generally increase with the increase of annealing time and temperature.

Keywords:

Bridgman/Stockbarger, EDXRFS, Linear attenuation Coefficient, InSe,

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