Durmuş Ali ALDEMİR, Havva Elif LAPA, Ahmet Faruk ÖZDEMİR, Nazım UÇAR

Doğal Oksit Arayüzey Tabakalı Zr/p-Si Schottky Diyotlarının Yüksek Frekanslarda Kapasite-Gerilim ve İletkenlik-Gerilim Karakteristiklerinin Analizi

Manyetik saçtırma yöntemiyle imal edilen Zr/SiO2/p-Si Schottky diyotların kapasite-gerilim-frekans (C-V-f) veiletkenlik-gerilim-frekans (G-V-f) ölçümleri 500 kHz- 3 MHz aralığında 5 farklı frekansta ve oda sıcaklığındaalınmıştır. 1 MHz frekans için C-V karakteristiği yardımıyla arayüzey oksit tabakasının kalınlığı 2.33 nm olarakhesaplanmıştır. Güçlü birikim bölgesindeki C ve G değerleri kullanılarak seri direncin ortalama değeri 70.5 olarak elde edilmiştir. Bu diyotlar için, Hill-Coleman metodu ile hesaplanan arayüzey durum yoğunluğunun (Dit)artan frekansla azaldığı görülmüştür. Elde edilen bulgulara göre, Zr/SiO2/p-Si Schottky diyotları hızlı anahtarlamaiçin umut vaat edicidir.

The Analysis of Capacitance-Voltage and Conductance-Voltage Characteristics of Zr/p-Si Schottky Diodes with a Native Oxide Interfacial Layer at High Frequencies

Capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G-V-f) measurements of Zr/SiO2/pSi Schottky diodes produced by magnetic sputtering technique were taken for five different frequencies (500 kHz3 MHz frequencies range) at room temperature. The thickness of the interfacial oxide layer was calculated as 2.33 nm by means of C-V characteristic for 1 MHz frequency. The average value of series resistance was obtained as 70.5  by using C and G values in the strong accumulation region. For these diodes, it was observed that the interfacial state density (Dit) calculated by the Hill-Coleman method decreased with increasing frequency. According to the findings, the Zr/SiO2/p-Si Schottky diodes are promising for fast switching.

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