Faycal DJEFFAL, Toufik BENDIB, Redha BENZID, Abdelhamid BENHAYA

An approach based on particle swarm computation to study the nanoscale DG MOSFET-based circuits

The analytical modeling of nanoscale Double-Gate MOSFETs (DG) requires generally several necessary simplifying assumptions to lead to compact expressions of current-voltage characteristics for nanoscale CMOS circuits design. Further, progress in the development, design and optimization of nanoscale devices necessarily require new theory and modeling tools in order to improve the accuracy and the computational time of circuits' simulators. In this paper, we propose a new particle swarm strategy to study the nanoscale CMOS circuits. The latter is based on the 2-D numerical Non-Equilibrium Green's Function (NEGF) simulation and a new extended long channel DG MOSFET compact model. Good agreement between our results and numerical simulations has been found. The developed model can also be incorporated into the nano-CMOS circuits' simulators to study CMOS-based devices without impact on the computational time and data storage.

Anahtar Kelimeler:

Particle Swarm, DG MOSFET, Optimization, nanoscale, compact model

An approach based on particle swarm computation to study the nanoscale DG MOSFET-based circuits

Keywords:

Particle Swarm, DG MOSFET, Optimization, nanoscale, compact model,

PDF

___

A. Kranti , T. M. Chung, D. Flandre and J.P. Raskin, “Analysis of quasi double gate method for performance prediction of deep submicron double gate SOI MOSFETs”, Semicond Sci. Technol, Vol. 20, pp. 423–429, 2005.
J. G. Fossum, L. Ge and M.H. Chiang, “ Speed superiority of scaled double-gate CMOS” IEEE Trans. Electron Devices, Vol. 49, pp. 808–811, 2002.
F. Djeﬀal, M. Chahdi, A. Benhaya, M.L. HaŞane, “An approach based on neural computation to simulate the nanoscale CMOS circuits: Application to the simulation of CMOS inverter”, Solid State electronics, Vol. 51, pp.26- 34, 2007.
F. Djeﬀal , M.A. Abdi, Z. Dibi, M.Chahdi, A. Benhaya, “A neural approach to study the scaling capability of the undoped Double-Gate and cylindrical Gate All Around MOSFETs”, Materials Sci and Eng: B, Vol.147, pp. 239-244, 2008.
F. Djeﬀal, S. Guessasma, A. Benhaya1, T. Bendib, “ A neural computation to study the scaling capability of the undoped DG MOSFET”. Semiconductor Physics, Quantum Electronics & Optoelectronics”, Vol.11, pp.196-202, 2008.
HA .El-Hamid, J. Roig, B. Iniguez, “Analytical predictive modelling for the study of tha scalability limits of multiple gate MOSFETs”, Solid State electronics, Vol(51),pp 414-422, 2007.
S. Datta , “Nanoscale device modelling: the Green’s function method”, Superlattices Microstruct, Vol (28), pp.253- 278, 2000.
Y.Taur , X. Liang, W. Wang, H. Lu, “Continuous analytic drain current model for DG MOSFETs”, IEEE Electron Dev Lett, Vol (25), pp.107-109, 2004. [9] J.Kennedy, R.C. Eberhart, “ Particle swarm optimization”, In: Proceedings of the IEEE International Conference on the Neural Networks, Piscataway, NJ: IEEE Service Center, pp.1942-1948, 1995.
F. Djeﬀal , D. Arar, N. Lakhdar, T. Bendib, Z. Dibi and M. Chahdi, “An approach based on particle swarm computation to study the electron mobility in wurtzite GaN”, Microelectronic. J, Vol(40), pp. 357-359, 2009.
K.W. Chau, “A split-step particle swarm optimization algorithm in river stage forecasting”, J. Hydrology, Vol (346), pp. 131-135, 2007.
M. Chan, Y. Taur, C-H. Lin, J. He, A.M. Niknejad, C. Hu, A framework for generic physics based double-gate MOSFET modeling, in Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2, Sun Francisco California, p270, 2003. [13] S. Selberherr, “Analysis and Simulation of Semiconductor Devices”, Wien: Springer- Verlag, 1984.
R. Venugopal , Z. Ren, S. Datta, M.S. Laundstrom, “Simulating quantum transport in nanoscale MOSFETs: real vs. mode space approaches”, J. Appl Phys, Vol (92), pp. 253-278, 2002.
G. Baccararni, S. Reggiani, “A compact double-gate MOSFET model comprising quantum- mechanical and non- static eﬀects”, IEEE Trans. Electron Devices, Vol (46), pp.1656–1666, 1999.
Y.Taur, T.H. Ning, “Fundamentals of modern VLSI devices”, Cambridge (UK): Cambridge university press, 1998.