The Thin Film Phototransistor Cell with Silver Interfacial Layer
In the present study, the silver (Ag) metal particle was used between two insulating layers to fabricated zinc-oxide (ZnO) thin film transistor. The Ag metal was evaporated with thermal systems. The dielectric materials such as Al2O3 and HfO2 were deposited atomic layer deposition (ALD) technique. In order to beter understand the device operation and Ag layer on charge trapping layer, the some electrical characteristics such as Ion/Ioff ratio, threshold voltage (Vth) were calculated with some different current-voltage (I-V) measurements. These values are found to be 1.1x103 and 2.1 V, respectively. The IDS-VDS measurements were repeated 20 times to investigate the memory effect of Ag material at the interface layer. This measurement shown that the hysterisis of memory window did not decreased. In addition these measurements, the transistor's response was measured to light by taking IDS-VDS measurements in the dark and under light. This device has been found to be photosensitive. These results shown that the ZnO thin film transistor can be used flash memory technology and photovoltaic device applications.
Anahtar Kelimeler:
Phototransistor, Thin film transistor, Silver
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- ISSN: 2149-6366
- Yayın Aralığı: Yılda 4 Sayı
- Başlangıç: 2012
- Yayıncı: Bingöl Üniversitesi Fen Bilimleri Enstitüsü
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The Thin Film Phototransistor Cell with Silver Interfacial Layer
Aydın İlinde 2013-2017 Döneminde Tarımsal Ürün İhracatının Genel Bir Değerlendirmesi