Durmuş Ali ALDEMİR, Ali KÖKCE, Ahmet Faruk ÖZDEMİR

Schottky diyot parametrelerini belirlemede kullanılan metotların geniş bir sıcaklık aralığı için kıyaslanması

50 nm Schottky kontak kalınlığına sahip Ni/n-GaAs Schottky diyotlarının akım-gerilim (I-V) verileri 60 K’den 320 K’e kadar olan geniş bir sıcaklık aralığında ölçüldü. Ni/n-GaAs Schottky diyotlarının önemli kontak parametreleri geleneksel I-V metodu, Norde metodu, genelleştirilmiş Norde metodu ve Cheung fonksiyonları kullanılarak her bir sıcaklık değeri için ayrı ayrı elde edildi. Daha sonra sonuçlar birbirleriyle kıyaslandı.

Anahtar Kelimeler:

Schottky Diyot, Geleneksel I-V metot, Cheung metot, Norde Metot, Genelleştirilmiş Norde Metot, Sıcaklık Bağlılığı

The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range

The current-voltage (I-V) data of Ni/n-GaAs Schottky diodes with 50 nm Schottky metal thickness has been measured in the temperature range of 60 K to 320 K. The important contact parameters of Ni/n-GaAs Schottky diodes have been obtained by using conventional I-V method, Norde method, generalized Norde method, and Cheung functions for each temperature. Then, the results have been compared each other.

Keywords:

Schottky Diode, Conventional I-V Method, Cheung Method, Norde Method, Generalized Norde Method, temperature dependence,

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