Irmak KARADUMAN, Özlem BARİN, Dilber Esra YILDIZ, Selim ACAR

Atomik Tabaka Biriktirme Metodu ile Üretilen HfO2 Tabanlı Sensörlerin Hidrojen Gaz Algılama Özelliklerinin İncelenmesi

Fosil yakıtların yakın gelecekte tükenecek olmaları ve çevreye CO2 gibi zararlı atıklar bırakmaları temiz, güvenilir ve geleceğin enerji kaynağı olan H2 gazının çok geniş ve değişik alanlarda kullanılmasının önünü açmıştır. Bu durum uygulama alanlarının hızla genişlemesine ve araştırmacıların H2 gaz sensörü üzerine yoğunlaşmasına neden olmuştur. Bu çalışmada p-Si yarıiletken üzerine Atomik Tabaka Biriktirme (ALD) yöntemi ile HfO2 ince film büyütülerek HfO2/p-Si yapı oluşturuldu. Üretilen numunenin farklı sıcaklıklarda (30°C-180°C) ve farklı gaz konsantrasyonlarında (1000ppm-4000ppm) zamana bağlı olarak hidrojen gazı için algılama özellikleri incelendi. Yapılan ölçümler sonucunda üretilen HfO2 /p-Si ince filmlerin düşük sıcaklık hidrojen gaz sensörü olarak kullanılabileceği görüldü.

Investigation of Hydrogen Gas Sensing Properties of HfO2 Based Sensor Produced By Atomic Layer Deposition Method

Fossil fuels can very quickly be exhausted condition and thus leave harmful residues such as CO2 environment clean and reliable use of the H2 gas as the energy source of the future are expanded in various fields. In this case, the new research on the rapidly expanding field of applications and H2 gas sensor causes the increase. In this study, HfO2 thin films are grown on the p-Si by Atomic Layer Deposition (ALD) method and HfO2 /p-Si thin film was produced. HfO2 /p-Si structure is grown by Atomic Layer Deposition method and hydrogen gas sensing properties were investigated. Produced sample at different temperatures (30 °C-180 °C) and at different gas concentrations (1000ppm-4000ppm) as a function of time is investigated with measuring the electrical properties. Measurement results show that HfO2 /p-Si thin films produced by ALD can be used as low temperatures hydrogen gas sensors.

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