Neslihan NOHUT MAŞLAKCI, Ali KÖMÜR, Abdullah BİÇER, Günseli TURGUT CİN, Ayşegül ÖKSÜZ

Bis-Kalkon Türevlerinin Elektrokimyasal Davranışlarının İncelenmesi

Bis-kalkon türevleri olarak bilinen (2E,5E)-2,5-dibenzilidensiklopentanon (P1) ve (2E,5E)-2,5-bis (4-nitrobenziliden) siklopentanonun (P2) elektrokimyasal davranışı çalışma elektrotu olarak bir indiyum kalay oksit (ITO) kullanılarak döngüsel voltametri ile incelenmiştir. Tekrarlanan döngüsel voltammogram ölçümleri bis-kalkon türevleri için mükemmel uzun süreli redoks stabilitesi sergilemiştir. P1'in 1. döngüsü için anodik bölgedeki oksidasyon piki -0.20 V'de görülürken, P2'nin oksidasyon piki -0.47 V'de gözlenmiştir. Öte yandan, P2 yapısında benzen halkası üzerinde p-konumunda elektron çekici NO2 grubunun varlığı, en yüksek dolu moleküler orbital (HOMO) ve en düşük boş moleküler orbital (LUMO) enerji aralığında bir artışa neden olmuştur. ITO cam substratlar üzerine kaplanan P1 ve P2 filmlerinin yüzey morfolojisi ve yapısal özellikleri, taramalı elektron mikroskopisi (SEM) ve enerji dağıtıcı X-ışını spektroskopisi (EDS) kullanılarak incelenmiştir. SEM mikrografları, P1 ve P2'nin ITO yüzeyi üzerinde homojen bir şekilde dağıldığını göstermiştir. CV ölçümünden sonra, P2'nin tane boyutunun artan ITO yüzey pürüzlülüğü ile arttığı gözlenmiştir. Ayrıca EDS sonuçları, ITO yüzeyi üzerinde P1 ve P2'nin varlığını doğrulamıştır.

Anahtar Kelimeler:

Bis-kalkon türevleri, döngüsel voltametri, elektrokimya

To Investigate the Electrochemical Behaviors of Bis-Chalcone Derivatives

The electrochemical behavior of (2E,5E)-2,5-dibenzylidenecyclopentanone (P1) and (2E,5E)-2,5-bis(4-nitrobenzylidene)cyclopentanone (P2) known as bis-chalcone derivatives was studied by cyclic voltammetry (CV) using an indium tin oxide (ITO) as the working electrode. Repeated cyclic voltammograms measurements exhibited excellent long-term redox stability for bis-chalcone derivatives. The oxidation peak for in the anodic region for the 1st cycle of the P1 appeared at -0.20 V, while the oxidation peak of P2 was observed at -0.47 V. On the other hand, the existence of the electron attracting NO2 group at p-position on the benzene ring in the structure of P2 caused an increase in the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) energy gap. The surface morphology and structural features of P1 and P2 films coated onto ITO glass substrates were investigated by using scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS). SEM micrographs demonstrated that the P1 and P2 were homogeneously distributed over the ITO surface. After CV measurement, it was observed that the grain size of P2 increased with increasing ITO surface roughness. Moreover, the EDS results confirmed the presence of P1 and P2 on the ITO surface.

Keywords:

Bis-chalcone derivatives, cyclic voltammetry, electrochemistry,

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