Modülasyon Frekansı Altında Geliş Açısının Dikey-Paralel Silisyum Güneş Pili Kapasitansına Etkisi

Bu çalışmada, analitik yaklaşımla dikey paralel silisyum güneş pili kapasitansı için modelleme yapıldı.Silisyum güneş Pilinin aşırı azınlık taşıyıcıları difüzyon katsayısının belirlenmesi ile ilgili bir teori sunuldu.Süreklilik denklemine bağlı olarak aşırı azınlık taşıyıcıların yoğunluğu, foto akım yoğunluğu ve foto gerilimbelirlendi. Ayrıca, bu çalışma foto akım yoğunluğu, foto gerilim ve difüzyon kapasitansına (açık ve kısa devre)geliş açısının etkilerini belirlememize olanak sağlar. Bu çalışmanın amacı, bu elektriksel parametreler ile güneşpili kapasitansına geliş açısının etkisini göstermektir.

Anahtar Kelimeler:

Difüzyon kapasitansı, dikey paralel silisyum güneş pili, geliş açısı

Effect of Incidence Angle on Capacitance of Vertical Parallel Silicon Solar Cell under Modulation Frequency

In this work, the modeling for the capacitance of a vertical parallel silicon solar cell has been carriedout with an analytical approach. A theory on the determination of the diffusion coeffcient of the excess minoritycarriers of a silicon solar cell is presented. Based on the continuity equation, excess minority carrier’s density,photocurrent density and photovoltage have been determined. Also, this study allows us to determine the inﬂuencesof incidence angles on the photocurrent density, the photovoltage and the diffusion capacitance (open and shortcircuit). The objective of this work is to show the effects of incidence angles on the solar cell capacitance with theseelectrical parameters.

Keywords:

Diffusion capacitance, incidence angle, vertical parallel silicon solar cell,

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