Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms(CMs) in the Au/n-Si (MS) structures at room temperature

In order to determine effects of interlayer, Dit, and Rs on the CMs, both Au/n-Si and Au/(0.01Ni-PVA)/n-Si (MPS) structures were fabricated on the n-Si wafer and their electrical parameters were extracted from the current-voltage (I-V) and capacitance-voltage (C-V) measurements. The ideality factor (n), zero-bias barrier height (ΦBo), rectifying rate (RR at ±5V), Rs, shunt resistances (Rsh), and density of Dit (at 0.40eV) values were found from the I-V data as 1.944, 0.733 eV, 3.50×103, 64.8 , 0.23 M, 1.62x1013 eV-1cm-2 for MS and 1.533, 0.818 eV, 1.15×107, 5.0 , 57.5 M, 8.82x1012 eV-1cm-2 for MPS. Fermi energy (EF), barrier height (ΦB(C-V)), depletion-layer width (WD) values were obtained from the C-V data as 0.239 eV, 0.812 eV, 1.14x10-4 cm for MS and 0.233 eV, 0.888 eV, 9.31x10-5 cm for MPS. These results indicated that the MPS structure has lower Rs, Dit, leakage current and higher RR, Rsh, BH compared with MS and so this interlayer can be successfully used instead of conventional insulator interlayer. The Ln(I)-Ln(V) plot at forward-bias region has three linear parts corresponding to the low, intermediate, and higher voltages. In these regions; conduction mechanism (CM) is governed by ohmic, trap charge-limited current (TCLC) and space charge-limited current (SCLC), respectively.

Keywords:

Polymer interlayer, Conduction mechanisms (CMs), Energy dependent interface trap density Comparison of the MS and MPS structures,

PDF

___

Abthagir PS, Saraswathi R, 2001. Junction properties of metal/polypyrrole Schottky barriersJ Appl Polym Sci, 81:2127-2135.
Alialy S, Kaya A, Marıl E, Altındal Ş Uslu İ, 2015. Electronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range, Philos. Mag. 95: 1448-1461.
Aydogan S, Saglam M, Turut A, 2005. The effects of the temperature on the some parameters obtained from current–voltage and capacitance–voltage characteristics of polypyrrole/n-Si structure. Polymer, 46(2): 563
Altındal Yerişkin S, Sarı B, Ünal Hİ, 2011. Electrical and dielectric characteristics of Al/polyindole Schottky barrier diodes. II. Frequency dependence. J.Appl. Pol. Sci., 120: 390-396.
Altındal Yerişkin S, Balbaşı M, Orak İ, 2017. The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature. J. Mater. Sci: Mater Electron, 28: 14040-14048.
Akhlaghi EA, Badali Y, Altındal S, Azizian-Kalandaragh, Y, 2018. Preparation of mixed copper/PVA nanocomposites as an interface layer for fabrication of Al/Cu-PVA/p-Si Schottky structures, Physica B-Condensed Matter, 546: 93-98.
Badali Y, Nikravan A, Altındal S, Uslu I, 2018. Effects of a thin Ru-doped PVP interface layer on electrical behavior of Ag/n-Si structures, Journal of Electronic Materials, 47: 3510-3520.
Bilkan Ç, Gümüş A, Altındal Ş, 2015. The source of negative capacitance and anomalous peak in the forward bias capacitance-voltage in Cr/p-Si Schottky barrier diodes (SBDs). Materials Science in Semiconductor Processing 39: 484-491.
Büyükbaş Ulaşan A, Altındal Yerişkin S, Tataroğlu A, Balbaşı M, Kalandarag YA, 2018. Electrical and impedance properties of MPS structure based on (Cu2O-CuO-PVA) interfacial layer. Journal of Material science: Materials in Electronics 29:16740-16746
Card HC, Rhoderick EH, 1971. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. J. Phys. D, Appl. Phys., 4(10): 1589-1601.
Çetinkaya HG, Altındal Ş, Orak İ, Uslu İ, 2017. Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene+Ca1.9Pr0.1Co4Ox doped poly(vinyl alcohol)) interfacial layer. J Mater Sci: Mater Electron, 28 (11): 7905–7911.
Demirezen S, Sönmez Z, Aydemir U, Altındal S, 2012. Effect of series resistance and interface states on the I-V, C-V and G/omega-V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature, Curr Appl Phys, 12: 266-272.
Durmuş P, Yildirim M, Altindal S, 2013. Controlling the electrical characteristics of Al/p-Si structures through Bi4Ti3O12 interfacial layer, Curr Appl Phys, 13: 1630-1636.
Ersoz G, Yucedağ I, Azizian-Kalandaragh Y, Orak I, Altindal S, 2016. Investigation of Electrical Characteristics in Al/CdS-PVA/p-Si (MPS) Structures Using Impedance Spectroscopy Method, IEEE Transaction Electron Dev, 63: 2948-2955.
Gökçen M, Tunç T, Altındal Ş, Uslu İ, 2012. Electrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodes, Mater. Sci. and Eng. B., 177: 416-420.
Gupta, RK, Singh RA, 2004. Schottky diode based on composite organic semiconductors. J Mater Sci. and Semicond Process, 7:83-87.
Forrest SR. 1997. Ultrathin organic films grown by organic molecular beam deposition and related techniques. Chem Rev, 97(6): 1793
Karabulut A, 2018. Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer. Iğdır Univ. J. Inst. Sci. & Tech. 8(3): 119-129.
Kaya A, 2015. On the anomalous peak in the forward bias capacitance and conduction mechanism in the Au /n-4H SiC(MS) Schottky diodes (SDs) in the temperature range of 140-400 K. Int. J. Mod. Phys. B., 29: 1550010.
Lin SD, IIchenko VV, Marin VV, Panarin KY, Buyanin AA, Tretyak OV, 2008. Frequency dependence of negative differential capacitance in Schottky diodes with InAs quantum dots. Appl. Phys. Lett., 93: 103103.
Nagaraju G, Reddy KR, Reddy VR, 2017. Electrical transport and current properties of rareearth dysprosium Schottky electrode on p-type GaN at various annealing temperatures. Journal of Semiconductors, 38 (11): 114001/1-9.
Ocak YS, Kulakci M, Kılıcoglu T, Turan R, Akkılıc K, 2009 The Electrical Properties of Al/Methylene-Blue/n-Si/Au Schottky Diodes. Synth. Met. 159:1603-1607.
Orak İ, Koçyiğit A, 2016.The Electrical Characterization Effect of Insulator Layer between Semiconductor and Metal. Iğdır Univ. J. Inst. Sci. & Tech. 6(3): 57-67.
Reddy VR, 2014. Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayer. Thin Solid Films, 556: 300-306.
Reddy VR, Manjunath V, Jandarhanam V, Kil Y-H, Choi C-J, 2014. Electrical Properties and Current Transport Mechanisms of the Au/n-GaN Schottky Structure with Solution-Processed High-k BaTiO3 Interlayer. Journal of Electronic Materials, 43: 3499-3507
Sze SM, 1981. Physics of Semiconductor Devices. Wiley and Sons, New York 832p.
Sharma BL, 1984. Metal-semiconductor Schottky barrier junctions and their application, Plenum Press, New York, 376p.
Tan SO, 2017. Comparison of graphene and zinc dopant materials for organic polymer interfacial layer between metal semiconductor structure. IEEE Trans. Electron Devices 64 : 5121–5127.
Taşçıoğlu İ, Tüzün Özmen Ö, Şahban HM, Yağlıoğlu E, Altındal Ş, 2017. Frequency Dependent Electrical and Dielectric Properties of Au/P3HT:PCBM:F4-TCNQ/n-Si Schottky Barrier Diode. Journal of Electronic Materials, 46 (4): 2379–2386.
Yeargan JR, Taylor HL, 1968. The Poole-Frenkel effect with compensation present. J Appl Phys, 39(12): 5600-5604.
Yerişkin S, Balbaşı M, Orak İ, 2017. Frequency dependent electrical characteristics and origin of anomalous capacitance -voltage (C-V) peak in Au/(graphene-doped PVA)/n-Si capacitors. J. Mater. Sci: Mater Electron. 28:7819-7826.
Werner J, Levi AFJ, Tung RT, Anslowar M, Pinto M, 1988. Origin of the Excess Capacitance at Intimate Schottky Contacts. Phys Rev Lett, 60:53-56.