Bibtex | @araştırma makalesi { jist521351, journal = {Journal of the Institute of Science and Technology}, issn = {2146-0574}, eissn = {2536-4618}, address = {}, publisher = {Iğdır Üniversitesi}, year = {2019}, volume = {9}, pages = {835 - 846}, doi = {10.21597/jist.521351}, title = {Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms(CMs) in the Au/n-Si (MS) structures at room temperature}, key = {cite}, author = {Altındal Yerişkin, Seçkin} } |
APA | Altındal Yerişkin, S . (2019). Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms(CMs) in the Au/n-Si (MS) structures at room temperature . Journal of the Institute of Science and Technology , 9 (2) , 835-846 . DOI: 10.21597/jist.521351 |
MLA | Altındal Yerişkin, S . "Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms(CMs) in the Au/n-Si (MS) structures at room temperature" . Journal of the Institute of Science and Technology 9 (2019 ): 835-846 < |
Chicago | Altındal Yerişkin, S . "Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms(CMs) in the Au/n-Si (MS) structures at room temperature". Journal of the Institute of Science and Technology 9 (2019 ): 835-846 |
RIS | TY - JOUR T1 - Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms(CMs) in the Au/n-Si (MS) structures at room temperature AU - Seçkin Altındal Yerişkin Y1 - 2019 PY - 2019 N1 - doi: 10.21597/jist.521351 DO - 10.21597/jist.521351 T2 - Journal of the Institute of Science and Technology JF - Journal JO - JOR SP - 835 EP - 846 VL - 9 IS - 2 SN - 2146-0574-2536-4618 M3 - doi: 10.21597/jist.521351 UR - Y2 - 2019 ER - |
EndNote | %0 Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms(CMs) in the Au/n-Si (MS) structures at room temperature %A Seçkin Altındal Yerişkin %T Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms(CMs) in the Au/n-Si (MS) structures at room temperature %D 2019 %J Journal of the Institute of Science and Technology %P 2146-0574-2536-4618 %V 9 %N 2 %R doi: 10.21597/jist.521351 %U 10.21597/jist.521351 |
ISNAD | Altındal Yerişkin, Seçkin . "Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms(CMs) in the Au/n-Si (MS) structures at room temperature". Journal of the Institute of Science and Technology 9 / 2 (Haziran 2019): 835-846 . |
AMA | Altındal Yerişkin S . Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms(CMs) in the Au/n-Si (MS) structures at room temperature. Iğdır Üniv. Fen Bil Enst. Der.. 2019; 9(2): 835-846. |
Vancouver | Altındal Yerişkin S . Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms(CMs) in the Au/n-Si (MS) structures at room temperature. Journal of the Institute of Science and Technology. 2019; 9(2): 835-846. |
IEEE | S. Altındal Yerişkin , "Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms(CMs) in the Au/n-Si (MS) structures at room temperature", Journal of the Institute of Science and Technology, c. 9, sayı. 2, ss. 835-846, Haz. 2019, doi:10.21597/jist.521351 |
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