Capacitance Voltage Characterization of Bifacial Silicon Solar Cell Under Polychromatic Modulated Illumination

Bu çalışmanın amacı, geniş spektrumlu aydınlatma altında iki yüzeyli silikon güneş pilinin difüzyon kapasitansı ve aşırı azınlık taşıyıcı yoğunluğu teorik çalışmasının sunulmasıdır. Güneş pili aşırı azınlık taşıyıcısından fotoakım ve fotogerilim yoğunluğu türetilmiştir. Difüzyon kapasitansı hem voltajın fonksiyonu ile hem de bağlantı yüzeyi rekombinasyon hızı ile ölçülmüştür. Elektrik polarizasyon etkileri farklı C-V (Difüzyon kapasitansı- Gerilim) grafikleri ile gösterilmiştir. Tüm çalışılan parametreler için, karakterizasyon voltaj kapasitansının elektrik alan parametreleri üzerindeki etkisi ve kavşak rekombinasyon hızı boyunca hücrenin operasyon noktasının etkisi gösterilmiştir

The aim of this work is to present a theorical study of a capacitance voltage characterization of a bifacial silicon solar cell under polychromatic modulated illumination. From the excess minority carrier's density in the solar cell, the photocurrent density and the photovoltage are derived. The diffusion capacitance was measured with both as a function of voltage and the junction surface recombination velocity. Electric polarization effects are shown through different C-V plots. For all the studied parameters, we exhibited the effect of electric field parameters on the capacitance voltage characterization and the operating point of the cell through the junction recombination velocity

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