Investigation Of Structural, Morphological And Electrical Properties Of SnO2 Thin Film Grown by SILAR Method

Due to its wide band gap value and large applications, tin dioxide (SnO2) is useful multifunctional material. In this study, SnO2 thin film was grown by the Successive Ionic Layer Adsorption and Reaction (SILAR) method for 40 cycles on the silver interdigital contact. Structural and morphological properties, XRD, SEM, and UV analysis were investigated. XRD measurements were taken from 20 to 80 twotheta degrees. The Tauc graph was plotted using the absorbance data. It was determined from the graph that the forbidden energy range was 3.81 eV. Urbach energy graph was also plotted which value was calculated as 0.46 eV. For electrical characterization, I-V and resistivity measurements were also taken depending on temperature by Keithley 2400 source meter and Lakeshore temperature controller. Current and voltage characteristics showed that at h.igh temperatures resistivity is decreased. It's clearly seen from the temperature-dependent conductivity graph, the upward trend in conductivity at high temperatures. The results showed that SnO2 thin film exhibits promising electrical applications for future work

Anahtar Kelimeler:

SnO2, SILAR, Electrical Characterization

Investigation of Structural, Morphological and Electrical Properties of SnO2 Thin Film Grown by SILAR Method

Due to its wide band gap value and large applications, tin dioxide (SnO2) is useful multifunctional material. In this study, SnO2 thin film was grown by the Successive Ionic Layer Adsorption and Reaction (SILAR) method for 40 cycles on the silver interdigital contact. Structural and morphological properties were investigated by XRD, SEM, and UV analysis. XRD analysis was taken using Cu Kα source in the range of 20- 80 two theta and it was observed that the crystal structure was formed. SEM analysis showed that the SnO2 material grew homogeneously on the glass surface. The Tauc graph was plotted using the absorbance data. It was determined from the graph that the forbidden energy range was 3.81 eV. Urbach energy graph was also plotted which value was calculated as 0.46 eV. For electrical characterization, I-V and resistivity measurements were also taken depending on temperature by Keithley 2400 source meter and Lakeshore temperature controller. The temperature-dependent resistance graph was plotted. The temperature-dependent resistance graph showed that the resistivity decreased with increasing temperature. Activation energies were calculated by drawing the temperature-dependent Arhenius graph. The results showed that the SnO2 thin film could be used in future electrical applications.

Keywords:

SnO2, SILAR, Electrical Characterization,

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