Nanotribological Properties Of Epitaxial Graphene Grown On C-Terminated Face Of Silicon Carbide Semiconductor

The frictional properties of mono-layer and multilayer epitaxial graphene grown on the C terminated face of SiC has been investigated by using atomic force microscopy measurements. Epitaxially grown graphene samples were characterized by Raman spectroscopy measurements. Atomic force microscopy has been employed in ambient conditions for friction measurements using pre-calibrated cantilevers. Both Raman spectroscopy and atomic force microscopy analysis showed that the number of defects, which increases consistent with increasing number of graphene layers, plays an important role on the tribological properties of epitaxial graphene.

Anahtar Kelimeler:

Friction, Nanotribology, Graphene, SiC, AtomicForce Microscopy.

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