Fotovoltaik Güneş Pillerinde Kullanılan ZnO ve CuO Filmlerinin SILAR Yöntemi ile Üretilmesi ve Karakterizasyonu

Bu çalışmada ZnO ve CuO filmleri pratik ve ekonomik bir teknik olan SILAR (Successive Ionic Layer Adsorption and Reaction) yöntemi ile üretilmiştir. Filmlerin yapısal, optik, elipsometrik, yüzeysel ve elektrik özellikleri sırası ile XRD, UV spektroskopisi, Spektroskopik Elipsometre (SE), Atomik Kuvvet Mikroskobu (AFM) ve dört-uç tekniği kullanılarak incelenmiştir. Filmlerin yasak enerji aralıkları, optik metot kullanılarak 3,22 eV-1,72 eV olarak hesaplanmıştır. Spektroskopik elipsometre (SE) tekniği ile filmlerinin kalınlıkları ve bazı optik sabitleri (sönüm katsayısı ve kırılma indisi) belirlenmiştir. Ayrıca, filmlerin üç boyutlu yüzey görüntüleri incelenmiş ve ortalama yüzey pürüzlülük değerleri 38 nm and 60 nm olarak tespit edilmiştir. Filmlerin elektriksel özdirenç değerleri ve iletim tipi sırasıyla dört-uç metodu ve sıcak uç tekniği kullanılarak belirlenmiştir.

The Production of ZnO and CuO Films by SILAR Method and Characterization for Use in Photovoltaic Solar Cells

In this study; ZnO and CuO films were produced by SILAR (Successive Ionic Layer Adsorption and Reaction) technique which is a practically and economic. The films of structural, optical, ellipsometric, surface and electrical properties were determined by XRD diffactometer, UV spectrophotometer, Spectroscopic Ellipsomery (SE), Atomic Force Microscope (AFM), Four-Probe, respectively. The band gaps of films were calculated as 3.22 eV-1.72 eV using optic method. The thickness and some optic constants (extinction coefficient and refractive index) of films were investigated by SE. Also, the three dimensional surface images of films were obtained and the average surface roughness values were determined as 38 and 60 nm. The electrical resistivity values and conduction mechanism were investigated by using four-probe and hot-probe technique, respectively.

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