Engin TIRAŞOĞLU, Canan AKSOY, Chris R M GROVENOR, Susannah SPELLER

Süperiletken FeySe1-xTex İnce Filmlerin Floresans Şiddet Oranları

Süperiletken FeySe1-xTex ince filmleri MgO altlıklar üzerine Rf püskürtme yöntemi kullanılarak üretildi ve üretim koşullarının ince filmlerin mikroyapısı üzerindeki farklılıkları incelendi. Bunun yanısıra üretilen ince filmlerin Te IK?/IK? fluorescence şiddet oranları tahripsiz EDXRF spektroskopisi kullanılarak çalışıldı. FeySe1xTex ince filmleri 59,5 keV enerjili radyoaktif 241-Am kaynağından yayılan ?-fotonları ile uyarıldı ve 5.9 keV'ta rezülasyonu 150eV olan Ultra-LEGe dedektörü ile veriler tespit edildi. Elde edilern sonuçlar, vakum ve Ar atmosferi basıncının numunelerin Te şiddet oranlarınının değişimine sebep olabileceğini gösterdi

The Fluorescence Intensity Ratios of Superconducting FeySe1-XTeX Thin Films

Superconducting thin films of FeySe1-xTex were grown on to the single crystal MgO substrates by RF sputtering and the effects of processing conditions on the microstructural development were investigated. Besides, the fluorescence intensity ratio IKβ/IKα of Te in those films were examined by using the nondestructive EDXRF spectroscopy. The FeySe1-xTex were irradiated with γ-photons at 59.5 keV from a 241-Am annular source and detected using an Ultra-LEGe detector with resolution of 150eV at 5.9 keV. The results showed that the heat treatment with vacuum and Ar pressure may be caused the change of the intensity ratios of Te in the thin films

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