SiC, cBN ve GaN’ün Spektral-Seçici Nano-Optik Uygulamalar İçin Polaritonik Performanslarının Belirlenmesi

Nanoteknolojideki gelişmeler neticesinde üstün özellik ve fonksiyonlara sahip sistem ve cihazların üretimi ile, söz konusu sistemlerde kullanılacak malzemelerin seçimi kritik öneme sahip hale gelmiştir.Yüzey fonon polaritonlarını destekleyen ve rezonansları kızılötesi bölgede olan malzemeler, plazmonikalternatiflerine göre (ör: metaller) daha düşük optik kayıplar sebebiyle de ışınım tabanlı enerjiuygulamaları için önem taşımaktadır. Bu çalışmada, literatürde öne çıkan üç fononik malzeme olarak SiC, GaN ve cBN’ün polaritonik davranışları incelenmiştir. Polaritonik performans katsayıları analitikolarak çözülmüş ve elde edilen polariton yayılma uzunluğu ve nüfuz derinliği sonuçları ile birliktedeğerlendirilmiştir. Malzeme-vakum arayüzü için elde edilen sonuçlar, genel polaritonik performansdeğerinin SiC için en yüksek olduğunu, SiC’ü sırasıyla cBN ve GaN’ın takip ettiğini ve bu performansgöstergelerinin malzemelerin transvers optik fonon frekansı ve rezonans frekansına bağlılığınıgöstermiştir. Elde edilen sonuçlar, ilgilenilen spektral aralıkta optimal performansla çalışacak malzemeseçiminin önemine atıf yapmaktadır.

Polaritonic Behaviors of SiC, cBN and GaN for Spectrally-Selective Nano Optics Applications

Advances in nanotechnology enables building systems and devices with outstanding properties and functions, which makes the material aspect critically important. Materials supporting surface phonon polaritons with their resonances located in the infrared range is interesting for radiation-based energy applications, with lower optical losses exhibited compared to plasmonic materials (i.e., metals). In this work, polaritonic behaviors of three prominent phononic materials, i.e., SiC, GaN, and cBN are studied. Polaritonic figure of merit relations are analytically solved and interpreted along with the polariton propagation lengths and penetration depths. Results obtained for single material-vacuum interface revealed the highest peak magnitude of overall polaritonic figure of merit for SiC, followed by cBN, and GaN; with these merits strong dependences on materials transverse optical phonon frequencies and resonance frequencies. The results highlight the selection of the proper material to work optimally in the desired spectral range.

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