A 2-D analytical model for cylindrical gate tunnel FET (CG-TFET) based oncenter potential

In this paper, a 2-D cylindrical gate tunnel FET (CG-TFET) model is developed based on the potential atthe center of cylinder. The center potential is obtained by Laplace solution in the cylindrical coordinate system and theaccuracy is validated using a 2-D TCAD device simulator. The tunneling of charge carriers in the CG-TFET is analyzedusing the center potential and the results are compared to the surface potential-based model. The drain current isformulated using the initial tunneling point and tunneling path, which further helps to obtain the threshold voltage ofthis model. The effect of gate engineering and band-gap engineering on the drain current are investigated. The devicescaling capability of the model is discussed extensively.

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