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• [1] Sze S.M., Physics of semiconductor devices, 2nd ed. New York Wiley. 1981.
• [2] Rhoderick E.H. and William, R.H., Metal-Semiconductor Contacts, 2nd ed. Clarendon, Oxford. 1988.
• [3] Yakuphanoglu F., Interface control and photovoltaic properties of n-type silicon/metal junction by organic dye, J. Alloys Comp. 494 (2), 451–455, 2010.
• [4] Gokcen M., Alli A., Investigation of electrical and photovoltaic properties of Au/poly(propylene glycol)-b-polystyrene/n-Si diode at various illumination intensities, Philosophical Magazine, 94 (9), 925-932, 2014.
• [5] Orak I., Turut A. And Toprak M., The comparison of electrical characterizations and photovoltaic performance of Al/p-Si and Al/azure C/p-Si junctions devices, Synthetic Metals, 200, 66-73, 2015.
• [6] Ozaydin C., Akkilic K., Ilhan S., Ruzgar S., Gullu O., Temel H., Characterization of an Au/n-Si photovoltaic structure with an organic thin film, Materials Science in Semiconductor Processing, 16 (4), 1125-1130, 2013.
• [7] Çetinkaya H.G., Tecimer H., Uslu H., Altindal S., Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures, Curr. Appl. Phys., 13, 1150-1156, 2013.
• [8] Kılıcoglu T., Aydın M. E. and Ocak Y. S., The determination of the interface state density distribution of the Al/methyl red/p-Si Schottky barrier diode by using a capacitance method, Phy. B. Cond. Matter 388 (1), 244–248, 2007.
• [9] Oyama N., Takanashi Y., Kaneko S., Momiyama K., Suzuki K. and Hirose F., Pentacene/n−-Si heterojunction diodes and photovoltaic devices investigated by I–V and C–V measurements, Micro. Eng., 88 (9), 2959–2963, 2011.
• [10] Ocak Y.S., Ebeoglu M. A., Topal G. and Kılıcoglu T., Temperature dependent electrical characteristics of an organic–inorganic heterojunction obtained from a novel organometal Mn complex, Physica B, 405, 2329-2333, 2010.
• [11] Çaldıran Z., Deniz A. R., Aydogan Ş., Yesildag A. and Ekinci D., The barrier height enhancement of the Au/n-Si/Al Schottky barrier diode by electrochemically formed an organic Anthracene layer on n-Si, Superlattices and Microstructures. 56 45–54, 2013.
• [12] Orak İ., Toprak M. and Turut A., Illumination impact on the electrical characterizations of an Al/Azure A/p-Si heterojunction, Physica Scripta 89, 115810-5, 2014.
• [13] Aydoğan Ş., Sağlam M. and Türüt A., On the barrier inhomogeneities of polyaniline/p-Si/Al structure at low temperature, Appl. Surf. Sci., 250 (1), 43-49, 2005.
• [14] Yakuphanoglu F., Ocak Y. S., Kılıcoglu T. and Farooq W. A., Interface control and photovoltaic properties of n-type silicon/metal junction by organic dye, Micro. Eng. 88, 2951–2944, 2011.
• [15] Kern W., Overview and evolution of silicon wafer cleaning technology Handbook of Silicon Wafer Cleaning Technology), 2, 2008.
• [16] Altindal S., Tunc T., Tecimer H., Yucedag I., Electrical and photovoltaic properties of Au/(Ni, Zn)-doped PVA/n-Si structures in dark and under 250 W illumination level, Materials Science in Semiconductor Processing, 28, 48-53, 2014.
• [17] Tatar B., Demiroglu D., Urgen M., Structure and photovoltaic properties of Ag/p-CuPc/a-Si/c-Si/Ag organic-inorganic hybrid heterojunction fabricated by chemical spray pyrolysis technique, Microelectronic Engineering, 108, 150-157, 2013.
• [18] Norde H., A modified forward I-V plot for Schottky diodes with high series resistance, Journal of Applied Physics, 50, 5052, 1979.
• [19] Bohlin K. E., Generalized Norde plot including determination of the ideality factor, Journal of Applied Physics, 60 (3), 1223, 1986.
• [20] McLeon A.B., Limitations to the Norde I-V plot, Semicond. Sci. Tech., 1,177-179, 1986.
• [21] ZAFER C., Organik Boya Esaslı Nanokristal Yapılı İnce Film Güneş Pili Üretimi, Ege Üniversitesi Fen Bilimleri Enstitüsü, Doktora Tezi. 2006.
• [22] Orak I., Kocyigit A., Turut A., The surface morphology properties and respond illumination impact of ZnO/n-Si photodiode by prepared atomic layer deposition technique, Journal of Alloys and Compounds, 691, 873-879, 2017.
• [23] Gokcen, M., Illumination Effects on Electrical Characteristics of Au/Bi4Ti3O12/n-Si Structures, Journal of Nanoelectronics and Optoelectronics, 10 (3), 309-313, 2015.
• [24] Gullu O. and Turut A., Photovoltaic and electronic properties of quercetin/p-InP solar cells, Sol. Ener. Mater. Sol. Cell, 92 (10), 1205–1210, 2008.