Sol-Jel Yöntemi ile Üretilen ZnO(Al)/p-Si Heteroekleminin Elektriksel Karakterizasyonu

Bu çalışmada, p-tipi Silisyum (p-Si) üzerine katkısız Çinko Oksit (ZnO) ve %2 Alüminyum katkılı çinko oksit (ZnOAl) kaplanarak oluşturulan heteroeklemlerin elektriksel özellikleri incelenmiştir. ZnO ve ZnOAl nanoparçacıklar Sol-Jel yöntemi ile sentezlenmiş ve ZnO/p-Si, ZnOAl/p-Si heteroeklemleri döndürme kaplama tekniği ile oluşturulmuştur. Kaplama sonrası örneklere 450 oC’de 30 dk termal tavlama işlemi uygulanmıştır. 10K-300K aralığında alınan Akım-Voltaj (I-V) ve Kapasite-Voltaj (C-V) ölçümleri örneklerin çok düşük sızıntı akımına sahip diyot davranışı sergilediğini göstermektedir. C-V ölçüm sonuçlarından diyotların bariyer yüksekliği (Vbi) ve taşıyıcı konsantrasyonları (Nd) hesaplandı. Derin seviye geçiş spektroskopisi (DLTS) tekniği ile arınma bölgesi civarında bulunan tuzak seviyeleri araştırılmıştır. Her iki örnekte de elektron tuzaklarının varlığı tespit edilmiştir.

Anahtar Kelimeler:

ZnO ince film, Al katkılama, ZnO/p-Si heteroeklemi, DLTS

Electrical Characterization of ZnO (Al) / p-Si Heterojunctions Fabricated by SolGel Method

In this work, the electrical properties of heterojunctions formed by coating of undoped Zinc Oxide (ZnO) and 2% Aluminum doped zinc oxid (AZO) on p-type silicon (p-Si) were investigated. ZnO and AZO nanoparticles were synthesized by Sol-Gel method and ZnO / p-Si, ZnO (Al) / p-Si heterojunctions were formed by spin coating technique. After the coating, the samples were thermally annealed at 450 oC for 30 minutes. Current-Voltage (I-V) and Capacitance-Voltage (C-V) measurements taken at 10K-300K show that the samples exhibit diode behavior with very low leakage current. Built-in potential (Vbi) and carrier concentrations (Nd) of diodes were calculated from C-V measurement results. Deep level transition spectroscopy (DLTS) technique was used to investigate trap levels around the depletion region. The presence of electron traps in both samples was determined.

Keywords:

ZnO thin film, Al doping, ZnO/p-Si heterojunction, DLTS,

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