n-AgInSe2/p-Si Heteroeklem Diyodunun Sıcaklığa Bağlı Akım-Gerilim Karakteristikleri

n-AgInSe2/p-Si heteroeklem diyodu, AgInSe2 ince filminin, p-tipi Si üzerine ardıl tabaka biriktirme yöntemi ile imal edilmiştir. Diyodun idealite çarpanı ve doyma akımı sıcaklık bağlı davranış göstermiştir. Aktivasyon enerjisi, geleneksel aktivasyon enerji grafiği kullanılarak hesaplanmıştır. Akım mekanizmaları kusur-destekli tünelleme ve taşıyıcı rekombinasyonu olarak belirlenmiştir. Ayrıca aktivasyon enerjisini hesaplamak için değiştirilmiş Horvath yöntemi, n-AgInSe2/p-Si heteroeklemi için ilk defa burada sunulmuştur.

Anahtar Kelimeler:

AgInSe2 ince film, Sıcaklık bağlılığı, Değiştirilmiş Horvath yöntemi

The Temperature-Dependent Current-Voltage Characteristics of n-AgInSe2/p-Si Heterojunction Diode

n-AgInSe2/p-Si heterojunction diode was fabricated by a successive layer deposition of AgInSe2 thin film on p-type Si. The ideality factor and saturation current of the diode exhibited temperature dependent behaviour. The activation energy was calculated by using traditional activation energy plot. The current mechanism for diode was determined as defect-assisted tunnelling and carrier recombination. Furthermore, a modified Horvath method which was firstly presented for n-AgInSe2/p-Si heterojunction here was used for calculation of activation energy.

Keywords:

AgInSe2 thin film, Temperature dependence, Modified Horvath method,

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