ELECTROLUMINESCENCE STUDY OF InP/InGaAsP/InAs/InP P-I-N LASER HETEROSTRUCTURE
MBE (Molecular Beam Epitaxy) grown p-i-n laser heterostructure, based on InAs/InP Quantum Dashes with quaternary InGaAsP Quantum Well, were investigated through electroluminescence (EL) measurements. Bipolar injection set on just of forward bias,VF, ≅1.3 V, resulting an emission of long wavelength laser light, peaking of 1550 nm. This value was consistent with thermal energy band gap, deduced from current-voltage measurement in space charge limited regime where mobility of injected carriers followed Poole-Frenkel type conduction.
Keywords:
EL, quantum dashes and annihilation.,
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- ISSN: 1304-7191
- Yayın Aralığı: Yılda 4 Sayı
- Yayıncı: Yıldız Teknik Üniversitesi
Sayıdaki Diğer Makaleler
Dilek ÖZDEMİR GÜNGÖR, Sıtkı GÖZLÜ
Harun ELCİK, Ali ZOUNGRANA, Nouha BEKARAKİ
Mustafa Tahsin YILMAZ, Ömer Said TOKER, Nevruz Berna TATLISU, Muhammet ARICI, Enes DERTLİ
Sevil YÜCEL, Pınar TERZİOĞLU, Muharrem E. BOĞOÇLU, Merve ÇELİKKOL
Zeynep AYDIN SİNİRLİOĞLU, Fahri AKBAŞ