Emine KARAGÖZ, Songül FİAT VAROL, Serkan SAYIN, Ziya MERDAN

330360

Dielectrical parameters and relaxation of Al/NFT/p-Si schottky diode with frequency dependence

Dielectrical parameters and relaxation of Al/NFT/p-Si schottky diode with frequency dependence

The fabricated Al/ Naphthalimide /p-Si Schottky diode’s dielectrical parameters and series resistance effect have been investigated by using the DC and AC measurements. W e have developed a facile interface structure that consisted of double-layer films in order to investigate the capacitance volume and series resistance effect through the device. The organic interlayer with little nanometer thickness between electrode and inorganic semiconductor drastically reduce the series resistance at the interface. The dielectric parameters have increased with decreasing frequency. Interestingly, the value of ε´ (≈3) even at 1 kHz shows that the prepared naphthalimide (with Thiophene property) nano-interlayer can provide more charges or energy storage ability and so it can be used instead of traditional interfacial layers.

Keywords:

Naphthalimide, Dielectrical Properties, Schottky Diode,

Sigma Journal of Engineering and Natural Sciences-Cover

ISSN: 1304-7191
Başlangıç: 1983
Yayıncı: Yıldız Teknik Üniversitesi

Arşiv

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