Some Electrical and Photoelectrical Properties of Conducting Polymer Graphene Composite /n-Silicon Heterojunction Diode

In this study, polythiophene-graphene (PTh-G) composite thin film was prepared on the n-type silicon (n-Si) semiconductor wafer by the spin coating method. Subsequently, the current-voltage (I-V) measurements were made on the fabricated Au/PTh-G/n-Si/Al device to ascertain the impact of the PTh-G interfacial layer on the device performance. The main device parameters such as ideality factor (n), barrier height (b), series resistance (Rs) were calculated by using the thermionic emission (TE) and Norde functions, and then, the obtained results were discussed in detail. Additionally, the capacitance-voltage (C-V) characteristic of the device was examined as a function of the frequency, and the device parameters such as diffusion potential (Vd), Fermi energy level (Ef), carrier concentration (Nd), b were detemined. Finally, the light intensity-dependent I-V measurements were taken to obtain information about the photoelectrical characteristics of the fabricated device. The obtained results have shown that the prepared composite material has a good potential to be used in optoelectronic applications such as photodiode, and photodetector.

Keywords:

Graphene, Polythiophene, Composite Material, Photoresponse Photosensitivity,

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[1] S. M. Sze, “Physics of Semiconductor Devices,” 2nd ed. Wiley, New York, 1981.
[2] E. H. Rhoderick, R. H. Williams, Metal-Semiconductor Contacts, 2nd ed., Clarendon Press, Oxford, 1988.
[3] R. T. Tung, “Recent advances in Schottky barrier concepts,” Materials Science and Engineering R, vol. 35, pp. 1-138, 2001.
[4] Z. Çaldıran, “Modification of Schottky barrier height using an inorganic compound interface layer for various contact metals in the metal/p-Si device structure,” Journal of Alloy and Compound, vol. 865, pp. 158856, 2021.
[5] E. Daş, “Electrical and photoelectrical properties of Schottky diode construction with three-dimensional (3D) graphene aerogel interlayer,” Optical Materials, vol. 121, pp. 111633, 2021.
[6] E. Daş, “Green synthesis of reduced graphene oxide and device fabrication for optoelectronic applications,” Erzincan University Journal of Science and Technology, vol. 14, pp. 524-541, 2021.
[7] S. Mahato, “Composition analysis of two different PEDOT:PSS commercial products used as an interface layer in Au/n-Si Schottky diode,” RSC Advances, vol. 7, pp. 47125, 2017.
[8] S.Ying, Z. Ma, Z. Zhou, R. Tao, K.Yan, M. Xin, Y. Li, L. Pan, A. Y. Shi, “Device based on polymer Schottky junctions and their applications: A review,” IEEE Acces, vol. 8, pp. 189646-189660, 2020.
[9] F. Vatansever, J. Hacaloglu, U. Akbulut, L. Toppare, “A conducting composite of polythiophene: synthesis and characterization,” Polymer International, vol. 41, pp. 237-244, 1996.
[10] K. R. Nemade and S. A. Waghuley, “Synthesis, characterization and thermal properties of polythiophene composites,” Asian Journal of Chemistry, vol. 24, pp. 5947-5948, 2012.
[11] S. Sivrikaya, A. Dalmaz, S. Durmuş, “Synthesis of nano poly(2-thiophenecarboxaldehyde) and characterization of structure,” Sakarya University Journal of Science, vol. 22, pp. 1571-1575, 2018.
[12] C. Zanardi, F. Terzi, R. Seeber, “Polythiophenes and polythiophene-based composites in amperometric sensing,” Analytical and Bioanalytical Chemistry, vol. 405, pp. 509-531, 2013.
[13] H. S. Wang, L. H. Lin, S. Y. Chen, Y. L. Wang, K. H. Wei, “Ordered polythiophene/fullerene composite core-shell nanorod arrays for solar cell applications,” Nanotechnology, vol. 20, pp. 075201, 2009.
[14] M. R. Karim, C. J. Lee, M. S. Lee, “Synthesis and characterization of conducting polythiophene/carbon nanotubes composites,” Journal of Polymer Science (Part A) Polymer Chemistry, vol. 44, pp. 5283-5290, 2006. [15] S. G. Bachhav and D. R. Patil, “Preparation and Characterization of Multiwalled Carbon Nanotubes-Polythiophene Nanocomposites and its Gas Sensitivity Study at Room Temperature,” Journal of Nanostructures, vol. 7, pp. 247-257, 2017.
[16] Z. Çaldıran, “Fabrication of Schottky barrier diodes with the lithium fluoride interface layer and electrical characterization in a wide temperature range,” Journal of Alloy and Compounds, vol. 816, pp. 152601, 2020.
[17] J. P. Melo, E. N. Schulz, C. M. Verdejo, S. L. Horswell, M. B. Camarada, “Synthesis and Characterization of Graphene/Polythiophene (GR/PT) Nanocomposites: Evaluation as High-Performance Supercapacitor Electrodes,” International Journal of Electrochemical Science, vol. 12, pp. 2933-2948, 2017.
[18] R. Singh, D. N. Srivastava, R. A. Singh, “Schottky diodes based on some semiconducting polymers,” Synthetic Metals, vol. 121, pp. 1439-1440, 2001.
[19] R. K. Gupta and R. A. Singh, “Schottky diode based on composite organic semiconductors,” Material Science in Semiconductor Processing, vol. 7, pp. 83-87, 2004.
[20] R. K. Gupta, K. Ghosh, P. K. Kahol, “Fabrication and electrical characterization of Au/p-Si/STO/Au contact,” Current Applied Physics, vol. 9, pp. 933-936, 2009.
[21] H. Norde, “A modified forward I-V plot for Schottky diodes with high series resistance,” Journal of Applied Physics, vol. 50, pp. 5052-5053, 1979.
[22] S. A. Yerişkin, M. Balbaşı, İ. Orak, “Frequency dependent electrical characteristics and origin of anomalous capacitance-voltage (C-V) peak in Au/(graphene-doped PVA)/n-Si capacitors,” Journal of Materials Science: Materials in Electronics, vol. 28, pp. 7819-7826, 2017.
[23] A. Chelkowski, “Dielektrik Physics,” Elsevier, Amsterdam, pp. 97-105, 1980.
[24] S. Demirezen, İ. Orak, Y. Azizian-Kalandaragh, Ş.Altındal, “Series resistance and interface states effects on the C-V and G/w-V characteristics in Au/(Co3O4-doped PVA)/n-Si structure at room temperature,” Journal of Materials Science: Materials in Electronics, vol. 28, pp. 1296-12976, 2017.
[25] A. Nikravan, Y. Badalı, Ş. Altındal, I. Uslu, İ. Orak, “On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage,” Journal of Electronic Materials, vol. 46, pp. 5728-5736, 2017.
[26] K. Chandra Sekhar Reddy, P. Sahatiya, I. Santos-Saucesa, O. Cortazar, R. Ramirez-Bon, “One-step fabrication of 1D p-NiO nanowire/n-Si heterojunction: Development of self-powered ultraviolet photodetector,” Applied Surface Science, vol. 513, pp. 145804, 2020.
[27] E. Daş, U. Incekara, Ş. Aydoğan, “A comparative study on electrical characteristics of Ni/n-Si and Ni/n-Pi Schottky diodes with Pinus Sylvestris Resin interfacial layer in dark and under illumination at room temperature,” Optical Materials, vol. 119, pp. 111380, 2021.
[28] Ö. Sevgili and İ. Orak, “The investigation of current condition mechanism of Al/Y2O3/p-Si Schottky barrier diodes in wide range temperature and illuminate,” Microelectronics Reliability, vol. 117, pp. 114040, 2021.
[29] A. Koçyiğit, A. Sarılmaz, T. Öztürk, F. Özel, M.Yıldırım, “A Au/CuNiCoS4/p-Si photodiode: electrical and morphological characterization,” Beilstein Journal of Nanotechnology, vol. 12, pp. 984-994, 2021.
[30] H. O. Doğan, Z. Orhan, F. Yıldırım, S. Aydoğan, “Self-powered photosensor based on curcumin:reduced graphene oxide (Cu:rGO)/n-Si heterojunction in visible and UV regions,” Journal of Alloys and Compounds, vol. 915, pp. 165428, 2022.
[31] M. Erdogan, Z. Orhan, E. Daş, “ Synthesis of electron-rich thiophene triphenylamine based organic materials for photodiode applications,” Optical Materials, vol. 128, pp. 112446, 2022.
[32] M. Gökçen, T. Tunç, Ş. Altındal, İ. Uslu, “Electrical and photocurrent characteristics of Au/PVA(Co-doped)/n-Si photoconductive diodes,” Materials Science and Engineering B, vol. 177, pp. 416-420, 2012.
[33] S. Demirezen, Ş. Altındal, İ.Uslu, “Two diodes model and illumination effect on the forward and reverse bias I-V and C-V characteristic of Au/PVA (Bi-doped)/n-Si photodiode at room temperature,” Current Applied Physics, vol. 13, pp. 53-59, 2013. [34] T. Tunç, M. Gökçen, “Preparation and electrical characterization of Au/n-Si (110) structure with PVA-nickel acetate composite film interfacial layer,” Journal of Composite Materials, vol. 46, pp. 2843-2850, 2012.
[35] H. Kacus, M.Yılmaz, A. Koçyiğit, U. İncekara, Ş. Aydoğan, “ Optoelectronic properties of Co/pentacene/Si MIS heterojunction photodiode,” Physica B: Condensed Matter, vol. 597, pp. 412408, 2020.
[36] A. G. Imer, E. Kaya, A. Dere, A. G. Al-Sehemi, A. A. Al-Ghamdi, A. Karabulut, F. Yakuphanoğlu, “Illumination impact on the electrical characteristics of Au/Sunset Yellow/n-Si/Au hybrid Schootky diode,” Journal of Materials Science:Materials in Electronics, vol. 31, pp. 14665-14673, 2020.
[37] M.Yılmaz, A. Koçyiğit, S. Aydoğan, U. İncekara, Y. Şahin, H. Kacus, “Influence of illumination intensity on electrical characteristics of Eosin y dye based hybrid photodiode:comparative study,” Applied Physics A, vol. 126, pp. 781, 2020.