The current-voltage (I-V) data of Ni/n-GaAs Schottky diodes with 50 nm Schottky metal thickness has been measured in the temperature range of 60 K to 320 K. The important contact parameters of Ni/n-GaAs Schottky diodes have been obtained by using conventional I-V method, Norde method, generalized Norde method, and Cheung functions for each temperature. Then, the results have been compared each other.
50 nm Schottky kontak kalınlığına sahip Ni/n-GaAs Schottky diyotlarının akım-gerilim (I-V) verileri 60 K’den 320 K’e kadar olan geniş bir sıcaklık aralığında ölçüldü. Ni/n-GaAs Schottky diyotlarının önemli kontak parametreleri geleneksel I-V metodu, Norde metodu, genelleştirilmiş Norde metodu ve Cheung fonksiyonları kullanılarak her bir sıcaklık değeri için ayrı ayrı elde edildi. Daha sonra sonuçlar birbirleriyle kıyaslandı.
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