SILAR yöntemiyle elde edilen Cu2SnS3 ince filmlerin yapısal ve optik özellikleri

Cu2SnS3 ince filmler, cam altlıklar üzerine SILAR yöntemi kullanılarak, oda sıcaklığında elde edilen filmlerin 350°C’de 1 saat süre ile sülfür atmosferinde tavlanması neticesinde büyütüldü. Filmlerin yapısal ve optik özellikleri, tavlama öncesi ve sonrası, X-ışını difraksiyonu (XRD), taramalı elektron mikroskobu (SEM), enerji ayırımlı X-ışını analizi (EDAX) ve optik soğurma ölçümleri kullanılarak incelendi. XRD sonuçları, tavlama işleminin filmlerin kristal yapısını amorfdan polikristale dönüştürdüğünü gösterdi. SEM görüntülerinden tavlamayla filmlerin yüzey morfolojisinin değiştiği, EDAX sonuçlarından ise filmlerde tavlama işlemi öncesi ve sonrası bakır fazlalığının olduğu belirlendi. Yapılan optik soğurma ölçümlerinden filmlerin direk yasak enerji aralığının tavlamayla, 1.27 eV değerinden 1.21 eV değerine azaldığı gözlendi.

Structural and optical properties of Cu2SnS3 thin films obtained by SILAR method

Cu2SnS3 thin films were obtained by annealing of SILAR deposited films at 350°C for 1 hour in sulphur atmosphere. The structural and optical properties of the films were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX) and optical absorption measurements, before and after annealing. The XRD results showed that the annealing process transformed the crystal structure of the films from amorphous to polycrystalline. SEM images revealed that the surface morphology of films was changed after annealing while EDAX analysis showed that the films were excess in copper concentration before and after annealing. Optical absorption measurements confirmed that the direct band gap of films decreased from 1.27 eV to 1.21 eV with annealing.

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