In/SnTe/Si/Ag Diyotunda Homojen Olmayan Engel Yüksekliği Analizi

SnTe ince film katmanı magnetron saçtrıma tekniği ile n-Si alttaş üzerine büyütüldü, ve In/SnTe/Si/Ag diyot yapısının elektriksel özellikleri, sıcaklık bağımlı düz besleme akım-voltaj (I-V) ölçümleri kullanılarak incelendi. Temel diyot parametreleri termiyonik emisyon (TE) modeli temel alınarak hesaplandı ve sıcaklık artışı ile sıfır-potansiyel engel yüksekliğinin (Φ B0 ) artışı ve idealite faktörünün (n) azalışı gibi ideal olmayan bir davranışta oldukları bulundu. Bu nedenle, eklemdeki toplam akım iletimi, engel yüksekliğinin Gauss dağılımı (GD) ile açıklandı. Φ B0 vs q ⁄ 2kT eğrisi, yapıdaki homojen olmayan engel oluşumunu ve GD kullanılarak düşük bariyerli local bölgelerin dağılımının açıklanabileceğini gösterdi. 0.166 eV standart sapma ile birlikte ortalama engel yüksekliği 1.274 eV olarak bulundu. Etkin Richardson eğrisinden, Richardson sabiti, literatürdeki değerlere yakın bir değerde, 119.5A/cm 2 K 2 olarak hesaplandı. Ayrıca, Cheung fonksiyonu kullanılarak yapıdaki seri direnç (R S ) etkisi analiz edildi. Arayüzey durumların yoğunluğu (D it ) diyot yapısının I-V karakteristiğinden elde edildi ve azalan sıcaklık değerlerine göre artış yönünde bir davranış gösterdiği bulundu.

The Analysis of Inhomogeneous Barrier Height in In/SnTe/Si/Ag Diode

SnTe thin film layer was fabricated by magnetron sputtering technique on n-Si substrate, and the electrical properties of the In/SnTe/Si/Ag diode structure was investigated by using temperature dependent forward bias current-voltage (I-V) measurements. The main diode parameters were calculated according to the thermionic emission (TE) model and they were found in an abnormal behavior with change in temperate in which zero-bias barrier height ( ) increases and ideality factor ( ) decreases with increasing temperature. Therefore, the total current flow though the junction was expressed by the Gaussian distribution (GD) of barrier height. The plot of vs showed the existence of inhomogeneous barrier formation and evidence for the application of Gaussian function to identify the distribution of low barrier height patches. The mean barrier height was found as 1.274 with the 0.166 eV standard deviation. From the modified Richardson plot, Richardson constant was calculated as 119.5A/cm2K2 in very close agreement with the reported values. Additionally, the effects of the series resistance ( ) were analyzed by using Cheung’s function. Distribution of the interface states ( ) were extracted from the I-V characteristics and found in increasing behavior with decreasing temperature.

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