Satinder K. SHARMA, B. PRASAD, Dinesh KUMAR

Application of PMA Towards Moderating the Charge Storage Capability of MIS Memory Cell Based on PECVD Deposited Silicon Nitride Thin Films

Application of PMA Towards Moderating the Charge Storage Capability of MIS Memory Cell Based on PECVD Deposited Silicon Nitride Thin Films

Turkish Journal of Physics

2007-Cilt: 31 - Sayı: 4

217-226

PECVD, Nitride films, C-V, G-V, I-V, P M A, hysteresis and memory window

PECVD, Nitride films, C-V, G-V, I-V, P M A, hysteresis and memory window

176