Beyhan TATAR, Canan YÖNEY, Dilek DEMİROĞLU

The Structural Properties of MoO3 Thin Films Grown by Magnetron Sputtering Technique

The molybdenum trioxide MoO3 thin films were growth on c-Si substrates by magnetron sputtering technique. The structural and morphological properties of MoO3 thin films were investigated by XRD, RAMAN and SEM analysis. Prior to annealing process, X-ray diffractogram indicated that MoO3 thin films vere amorphous nature. All of the MoO3 thin films were applied three different annealing temperature and obtained optimum annealing temperature with 300 0C. XRD patterns of annealed thin films showed that these MoO3 thin films have polycrystalline nature with 2θ peak at 12˚,23˚, 25˚, 38˚, 55˚and 58˚ corresponding to the (020), (110), (040), (060), (112) and (081) planes. RAMAN spectrum of the MoO3 thin films were determined 14 Raman active peaks belong to α-phase MoO3. The surface morphology of the MoO3 thin films as deposited has appeared to be uniform with smaller grains and exhibits a coarse structure. Annealing of the MoO3 thin films favors growth and agglomeration of small grains.

Keywords:

MoO3 thin films Metal oxide semiconductors, Surface Properties, Structural Properties,

PDF

___

1] K. AL-Abdullah, Energy Procedia, 19, (2012).
[2] P.C. Lansåker, P. Petersson, G.A. Niklasson, C.G. Granqvist, Sol. Energy Mater.Sol. Cells, 117, (2013).
[3] A.L. Daltin, A. Addad, J.P. Chopart, Microelectron. Eng., 108, (2013).
[4] T. Audichon, E. Mayousse, T.W. Napporn, C. Morais, C. Comminges, K.B. Kokoh,Electrochim. Acta, 132, (2014).
[5] L. Boudaoud, N. Benramdane, A. Bouzidi, A. Nekerala, R. Desfeux, Optik e Int. J.Light Electron Opt., 127, (2016).
[6] B. Mauvernay, L. Presmanes, S. Capdeville, V.G. de Resende, E. De Grave,C. Bonningue, P. Tailhades, Thin Solid Films, 515, (2007).
[7] W. Peng, J. Li, B. Chen, N. Wang, G. Luo, F. Wei, Catal. Commun., 74, (2016).
[8] J. Yao, K. Hashimoto, A. Fujishima, Nature 355, (1992).
[9] C. Imawan, F. Solzbacher, H. Steffes, E. Obermeier, Sens. Actuators B, 64, (2000).
[10] J. K. Shin, S. M. Jeong, Y. Tak, S. H. Baeck, Research on Chemical Intermediates, 36, (2010).
[11] L. Seguin, M. Figlarz, R. Cavagnat, J.C. Lassegues, Spectrochimica Acta Part A, 51 (1995).