Pentacene/n-Si Heteroeklem Aygıtlarının Yapımı ve Karakterizasyonu

Bu çalışmada organik yarıiletken özellik gösteren pentacene malzemesi kullanılarak elde edilen doğrultucu kontakların elektriksel özellikleri incelendi. İlk olarak n-Si bir yüzeyine termal buharlaştırma yöntemi ile Al metali kaplandı ve 450 °C de 10 dakika tavlanarak omik kontak elde edildi. Daha sonra termal buharlaştırma yöntemi ile n-Si yarıiletkeninin diğer yüzeyine Pentacene organik filmi kaplandı. Son olarak elektriksel ölçümler için DC saçtırma yöntemi ile Pentacene üzerine Ni kaplanarak daire şeklinde sekiz farklı kontak elde edildi. Ni/Pentacene/n-Si/Al heteroeklem aygıtlarının oda sıcaklığında ve karanlıkta I-V (Akım Voltaj) ölçümleri yapıldı. TE teorisi kullanılarak yapılan hesaplamalardan elde edilen aygıtların benzer karakteristik özelliklere sahip olduğu görülmüştür. D1 numaralı Ni/Pentacene/n-Si/Al heteroeklem aygıtı 0.83 eV engel yüksekliği ve 1.41 idealite faktörü ile Schottky davranış göstermiştir. Ayrıca Cheung ve Norde fonksiyonları gibi farklı metotlar kullanılarak engel yüksekliği ve idealite faktörü ile beraber D1 numaralı Ni/Pentacene/n-Si/Al heteroeklem aygıtının seri direnç değerleri de (Rs) hesaplanmıştır.

Anahtar Kelimeler:

Pentacene, heteroeklem aygıt, Schottky diyot, organik yarıiletken

The Fabrication of the Pentacene/n-Si Heterojunction Devices and Characterization

In this study, electrical properties of rectifier contacts obtained by using organic semiconducting pentacene material were investigated. Firstly, Al metal was evaporated on one surface of n-Si wafer for back contact by thermal evaporation and then n-Si was annealed at 450 °C for 10 mininutes. Then, pentacene organic film was deposited on the other surface of n-Si wafer by thermal evaporation. Finally, eight circle Ni contacts with 7.85×10-3 cm-2 area were coated on Pentacene film by sputtering method for the electrical measurements. Current-voltage (I-V) measurements were performed at the room temperature and in dark of Ni/Pentacene/n-Si/Al heterojunction devices. The basic diode parameters such as ideality factors (n) and the barrier heights (Ω) of Ni/Pentacene/n-Si/Al devices were calculated using forward bias I–V curve. The D1 Ni/Pentacene/n-Si/Al heterojunction device showed Schottky behavior with barrier heights of 0.83 eV and ideality factors of 1.41 using thermionic emission (TE) theory. Other devices have similar characteristics. Furthermore, both parameters and series resistance (Rs) of number D1 Ni/Pentacene/n-Si/Al heterojunction device were calculated using different methods as Cheung and Norde functions.

Keywords:

Pentacene, heterojunction devices, Schottky diode, organik semiconductor,

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