Electrical and Optical Properties of TPBi and CzSi Films Fabricated by Spin Coating: TheEffects of Varying Thickness and Applied Rapid Thermal Annealing

Electrical and optical properties depending on effects of varying thickness and appliedrapid thermal annealing of TPBi and CzSi films fabricated by spin coating were determined in detailand the results of these effects were analyzed and discussed. While TPBi film with the highestelectrical conductivity in the 3.54-3.56 eV is 0.714 mm thick film (4.13x$10^{12}$ Siemens at 3.55 eVenergy), the film with the lowest electrical conductivity is 0.702 mm thick (1.72x$10^{12}$ Siemens at 3.55eV energy). It was found that the refractive index values of TPBi film increased with increasingthickness in region between 356 nm-374 nm. It was observed that when the thickness of TPBi filmwas increased from 0.702 mm to 0.703 mm, optical band gap of the film did not change, when it wasincreased to 0.706 mm, the optical band gap energy increased from 3.48 eV to 3.52 eV. As for therapid annealing effects; basic physical properties of CzSi film depending on various annealedtemperatures have been investigated in detail, just like thickness effects. In summary, differentthicknesses and rapid thermal effects on noteworthy physical properties of films such as opticalelectrical conductivity, absorption band edge energy, refractive index, optical band gap energy havebeen studied and discussed in detail.

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