Effect of Incidence Angle on Capacitance of Vertical Parallel Silicon Solar Cell under Modulation Frequency

Bu çalışmada, analitik yaklaşımla dikey paralel silisyum güneş pili kapasitansı için modelleme yapıldı. Silisyum güneş Pilinin aşırı azınlık taşıyıcıları difüzyon katsayısının belirlenmesi ile ilgili bir teori sunuldu. Süreklilik denklemine bağlı olarak aşırı azınlık taşıyıcıların yoğunluğu, foto akım yoğunluğu ve foto gerilim belirlendi. Ayrıca, bu çalışma foto akım yoğunluğu, foto gerilim ve difüzyon kapasitansına (açık ve kısa devre)

Modülasyon Frekansı Altında Geliş Açısının Dikey-Paralel Silisyum Güneş Pili Kapasitansına Etkisi

In this work, the modeling for the capacitance of a vertical parallel silicon solar cell has been carried out with an analytical approach. A theory on the determination of the diffusion coefficient of the excess minority carriers of a silicon solar cell is presented. Based on the continuity equation, excess minority carrier’s density, photocurrent density and photovoltage have been determined. Also, this study allows us to determine the influences of incidence angles on the photocurrent density, the photovoltage and the diffusion capacitance (open and short circuit). The objective of this work is to show the effects of incidence angles on the solar cell capacitance with these electrical parameters

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