Ara Katmanlı Si-Tabanlı Heteroeklemin Dielektrik Karakterizasyonu

Bu çalışmada, Al/TiO2 /p-Si/Al heteroeklemi üretildi ve bazı elektrik ve dielektrik karakteristikleri araştırıldı. TiO2 arayüzey katmanının sentezlenmesi için yüzey düzgünlüğü ve kararlılığı gibi sahip olduğu bazı avantajlardan dolayı atomik katman kaplama tekniği kullanıldı. Elektriksel ve dielektrik karakteristiklerinin belirlenmesi için, oda sıcaklığında, -1 ile +1 V beslem voltajı ve 10 kHz-1MHz frekans değerleri aralıklarında empedans spektroskopisi ölçümleri yapılmıştır. Elektriksel parametreler olarak arayüzey halleri dağılımı ve seri direnç değerleri belirlenmiştir. Bunlara ek olarak, dielektrik kaybı ve katsayısı, elektriksel modülün gerçek ve imajiner kısmı ve AC elektrik iletkenliği gibi dielektrik parametrelerin frekansa ve voltaja güçlü bir şekilde bağlı olduğu bulunmuştur. Elektrik ve dilelektrik karakteristikler üretilen aygıtın arayüzey halleri ve polarizasyon değerlerinin düşük frekanslarda AC sinyalini takip edebildiğini göstermektedir.

Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer TiO2

In this study, Al/TiO2/p-Si/Al heterojunction is fabricated and investigated some electrical and dielectriccharacteristics. Atomic layer deposition technique was used for synthesize of TiO2 interfacial layer due to the someadvantages such as uniformity and stability of surface. For determining electrical and dielectric characteristics,impedance spectroscopy measurements were performed in range from -1 to +1 V bias voltages and 10 kHz-1MHzfrequency range at room temperature. As an electrical parameters, interface states distribution and series resistancevalues was determined. In addition to these, it is found that the dielectric properties such as dielectric loss andconstant, real and imaginary parts of electric modulus, loss tangent and AC electric conductivity values wasdepended on frequency and voltage strongly. The electrical and dielectric characteristics show that interface statesand polarization values of fabricated device can follow AC signal at low frequency values

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