Grafen oksitin modifiye Hummers yöntemi ile sentezi ve film olarak Al/GO/nInP diyot performansına etkileri

Grafen oksit (GO) modifiye Hummers yöntemi ile sentezlendi. Metal-yarıiletken arayüzeyine spray pyrolysis yöntemiylebüyütülen grafen oksit filmin Al/GO/n-InP Schottky diyot karakteristikleri üzerine etkisi araştırıldı. GO filmlerin yapısalözellikleri X-Işını kırınımı ölçümleri (XRD) ve taramalı elektron mikroskobu (SEM) ölçümleri ile belirlendi. GO filminabsorbans ve transmittans spektrumları alınarak optik özellikleri araştırıldı. Al/GO/n-InP diyotunun oda sıcaklığındaki IV karakteristiklerinden bu yapının doğrultucu özellik gösterdiği görüldü. Ayrıca, karanlık ve 100 mW/cm2ışık şiddetialtında yapılan I-V ölçümleri doğrultusunda diyotun oldukça iyi fotovoltaik özelliklere sahip olduğu belirlendi. Al/GO/nInP Schottky diyotunun idealite faktörü (n), engel yüksekliği (Φb0), seri direnç (Rs) ve şönt direnci Rsh gibi karakteristikparametreleri hesaplanarak arayüzey tabakasız referans Al/n-InP diyotu ile karşılaştırıldı. Al/GO/n-InP Schottky diyotyapısının çeşitli elektronik ve optoelektronik devre uygulamaları için uygun bir malzeme olduğu görüldü.

Synthesis of graphene oxide by modified Hummers method and its effects on Al/GO/n-InP diode performance as interlayer film

Graphene oxide (GO) was synthesized by the modified Hummers method. The graphene oxide film deposited by using spray pyrolysis on metal-semiconductor interface of Al/GO/n-InP Schottky diode. The effect of GO film on Al/GO/n-InP Schottky diode characteristics was investigated. The structural properties of GO films were determined by X-Ray diffraction measurements (XRD) and scanning electron microscopy (SEM) measurements. The absorbance and transmittance spectra of the GO film were measured and their optical properties were investigated. From the I-V characteristics of the Al/GO/n-InP diode at room temperature, this structure was shown to have a rectifying property. In addition, it was determined that the diode had very good photovoltaic properties from the I-V measurements under dark and 100 mW/cm2 light intensity. The characteristic parameters of the Al/GO/n-InP Schottky diode such as the ideal factor (n), barrier height (Φb0), series resistance (Rs) and shunt resistance (Rsh) were calculated and compared with the reference Al/n-InP diode. The Al/GO/n-InP Schottky diode structure was found to be a suitable material for various electronic and optoelectronic circuit applications.

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