Levent GÖKREM, Fatih V. ÇELEBİ, Remzi YILDIRIM

Dört ton küçük işaret girişli GaN HEMT transistörün farklı sıcaklıklardaki asimetrik genlik değişimi

Bu çalışmada, GaN HEMT transistörün sıcaklığa bağlı analizi yapılarak Volterra güç serisi üçüncü dereceyekadar açılmış ve küçük işaret transfer fonksiyonları ($H _1, H _2, H _3$) elde edilmiştir. Birinci çekirdek küçük işarettransfer fonksiyonu (H1) kullanılarak 100K, 300K ve 600K sıcaklık değerlerinde dört-tonlu küçük işaretgirişinden elde edilen intermodülasyon (IMD) frekans bileşenleri, geçit-kaynak (Gate source, Vgs) geriliminebağlı olarak analiz edilmiştir. Çalışmada IMD frekans bileşenleri iki grupta irdelenmiş; birinci grup bileşenler (1- 6) ve ikinci grup bileşenler ise (7-17) olarak alınmış ve gruplar arası ve grup içi asimetrik genlik değişimi, kritikfrekans bölgesi, bant genişliği ve IMD haberleşme de değerlendirilmiştir.

Asymmetric amplitude variation for four tone small signal input GaN HEMT at different temperatures

In this study, temperature dependence of GaN HEMT is analyzed by Volterra power series expansion up to thirdorder by obtaining the small signal transfer functions $H _1, H _2$ and $H _3.$ By using the first order-kernel small signaltransfer function ($H _1$) at different temperature values of 100K, 300K and 600K (Kelvin, K) of four-tone smallsignal input, The intermodulation (IMD) frequency components are analyzed with respect to gate to sourcevoltage Vgs. In the study, the IMD frequency components are examined in two groups which are (1-6) and (7- 17) respectively. The asymmetric amplitude changes between and inside the groups, critical frequency region,bandwidth and IMD communications are also evaluated.

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