Şemsettin ALTINDAL, Adem TATAROĞLU, İlbilge DÖKME

Effect of surface states on electrical characteristic of metal-insulator-semiconductor (MIS) diodes

Metal-yarıiletken Schottky engel diyotlannda yarıiletkenle dengede olduğu kabul edilen arayüzey durumların dağılımı düşük ve yüksek sıcaklıkta akım-voltaj (I-V) karakteristiklerinden hesaplandı. Schottky diyotların doğru besleme I-V karakteristiklerinde ideal olmayan davranışı arayüzey durumlarından dolayıdır. Oda sıcaklığında idealite faktörü sırasıyla 1,6 ve 1,85 olan n ve p tipi Schottky diyotları ideal olmayan bir davranış gösterdi. İdealite faktörünün hem n hem de p tipi Schottky diyotunda yüksek çıkması arayüzey durumlarının yüksek olmasına atfedildi. Metal ile yarıiletken arasındaki yalıtkan arayüzey tabakasının etkisi incelendi. Yüksek yoğunluklu arayüzey durumları aynı zamanda Schottky diyotunda engel yüksekliği düşmesine neden olur. Norde fonksiyonu kullanılarak Schottky diyotunda idealite faktörünün $1

Arayüzey durumlarının MIS tipi diyotlarda elektriksel karakteristiklere etkisi

The current-voltage (I-V) characteristics of Metal-Semiconductor Schottky barrier diodes which is studied. Distribution of interface states in equilibrium with semiconductor were determined at two (low and high) temperatures. The interface states were responsible for non-ideal behavior of the forward I-V characteristic of diodes. Both diodes (n and p type Si) showed non-ideal behavior with an ideality factor (n) 1.6 and 1.85 respectively at room temperature. The higher values of ideality factor (n) were attributed to an order of magnitude higher density of interface states in the both p and n type Schottky diodes. The effect of an interfacial insulator layer between the metal and semiconductor are also studied. The high density of interface states also caused a reduction in the barrier height of the Schottky diode. It is shown that by using developed Norde function at each temperature, barrier height $Phi_b$, series resistance $R_s$ and ideality factor n can be determined even in the case $1

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