InGaAsP/InP Yapısının Yapısal, Morfolojik ve Elektriksel Karakterizasyonları

Bu çalışmada, InGaAsP tabakası InP alttaş üzerine Moleküler Demet Epitaksi (MBE) tekniği kullanılarak büyütüldü. InGaAsP/InP yapısının yapısal ve morfolojik özellikleri yüksek çözünürlüklü x-ray kırınımı (HR-XRD) ve atomik kuvvet mikroskobu (AFM) ölçümleri ile incelendi. Ayrıca, InGaAsP/InP yapısının deneysel ileri ve ters besleme akım-voltaj (I-V) karakteristiği oda sıcaklığında incelendi. İdealite faktörü, bariyer yüksekliği ve seri direnç gibi temel elektriksel parametreler ileri besleme I-V karakteristiğinden belirlendi

The Structural, Morphological and Electrical Characterizations of InGaAsP/InP Structure

In this study, InGaAsP layer is grown on InP substrates by using Molecular Beam Epitaxy (MBE) technique. The structural and morphological properties of InGaAsP/InP structure have been investigated by means of high resolution x-ray diffraction (HR-XRD) and atomic force microscopy (AFM) measurements. In addition, the experimental forward and reverse bias current-voltage (I-V) characteristic of InGaAsP/InP structure was investigated at room temperature. The electrical parameters such as idealite factor, barrier height and series resistance were extracted from forward bias I-V characteristics

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