A Wide Frequency Range C-V and G-V Characteristics Study in Schottky Contacts with a BODIPY-Pyridine Organic Interface

Bu çalışmada organik arayüzey tabakalı Schottky diyot yapısı üretimi ve kapasite-iletkenlik-voltaj ölçümlerine frekans etkisi amaçlandı. Bu kapsamda, 350 μm kalınlığında, (100) yönelimli, 2 inç çapında, 1-20 Ω.cm özdirençli, fosfor katkılı n tipi bir silisyum yarıiletken kristali kullanıldı. Bu kristalin üzerine “(E)-5,5-difloro-1,3,7,9-tetrametil-10-fenil-2-(2-(piridin-2-yl)vinil)-5H-54,64-dipirol [1,2-c:2',1-'f][1,3,2] diazaborinin” (BODIPY-Pyridine) ince filmi spin kaplama tekniği kullanılarak kaplandı. Termal buharlaştırma sistemi kullanılarak indiyum (In) ve altın (Au) buharlaştırılmasıyla omik ve doğrultucu kontaklar kaplandı ve Au/BODIPY-Pyridine/n-Si/In Schottky diyotu üretildi. Bu yapının karanlıkta farklı frekanslarda kapasite-voltaj (C-V) ve iletkenlik-voltaj (G-V) ölçümleri alındı. Frekansa bağlı olarak seri direnç (Rs) ve arayüzey durum yoğunluğu (Nss) değerleri sırasıyla iletkenlik ve Hill-Coleman yöntemi kullanılarak belirlendi.

Anahtar Kelimeler:

Capacitance, Conductance, Organic material, Schottky diode

A Wide Frequency Range C-V and G-V Characteristics Study in Schottky Contacts with a BODIPY-Pyridine Organic Interface

In this study, it was aimed to produce an organic interface layered Schottky diode structure and frequency effect on capacitance-conductance-voltage measurements. In this context, phosphor doped n-type Si single crystal has been used as a semiconductor substrate with a 1-20 Ω.cm resistivity, (100) surface oriention, 2 inches in diameter and 350 μm thickness. The (E)-5,5-difluoro-1,3,7,9-tetramethyl-10-phenyl-2-(2-(pyridin-2-yl)vinyl)-5H-54,64-dipyrrolo [1,2-c:2',1'-f] [1,3,2] diazaborinine (BODIPY-Pyridine) thin film was coated on n-Si using the spin coating technique. Ohmic and rectifier contacts were coated by evaporation of indium (In) and gold (Au) using a thermal evaporation system and Au/ BODIPY-Pyridine/n-Si/In Schottky diode was fabricated. Capacitance-voltage (C-V) and conductance-voltage (G-V) measurements of this structure were gained at different frequencies in the dark. Contingent on the frequency, the series resistance (Rs) and the interface state density (Nss) values were identified by using the conductance and Hill-Coleman method, respectively.

Keywords:

Capacitance, Conductance, Organic material, Schottky diode,

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