Tek Kristal Formdaki $FeTe_{0.5}Se{0.5}$ Süperiletken Sistemine In (% 5’ e kadar) Katkısının Yapısal ve Elektriksel İletim Özelliklerine Etkisi

Bu çalışmada, Self-flux metodu ile tek kristal formda üretilen ve %5’ e kadar In katkılanmış $FeTe_{0.5}Se{0.5}$ sisteminin $(FeTe_{0.5}Se_{0.5}+%1, FeTe{0.5}Se{0.5}+%3, FeTe{0.5}Se{0.5}+%5)$ yapısal ve elektriksel iletim özelliklerini incelenmiştir. $FeTe{0.5}Se{0.5}$ sistemi içerisinde oldukça düşük erime sıcaklığına sahip olan İndiyum’un kristal oluşumunda bir akı görevi gördüğü ve aynı zamanda yapıda homojen bir dağılım sergilediği bulunmuştur. Ancak In katkılama oranı arttıkça $FeTe_{0.5}Se{0.5}$ sisteminin süperiletkenlik özelliklerinin olumsuz yönde değiştiği görülmüştür. Katkılama oranlarına göre en iyi değerin, Tcbaşlangıç ve Tcsıfır değerleri, %1 In katkılı örnekte 16.07 K ve 14.80 K olarak bulunmuştur. Daha yüksek In katkı oranları için ise her iki değerinde azalma eğilimine girdiği bulunmuştur. Werthamer-Halfand-Hohenberg (WHH) eşitliği ile manyetodirenç eğrilerinden üst kritik alan değerleri hesaplanmış ve en iyi değerin %1 In katkısı için olduğu bulunmuş, yüksek katkılama oranları için de değerin azaldığı gözlenmiştir. Arrhenius eşitliği ile belirlenen, vorteks oluşum ve hareketlilik aktivasyon enerjisi 0 Teslada %1, %3 ve %5 In katkılı örnekler için 1822, 515, 457eV’ olduğu bulunmuştur. Elde edilen sonuçlar, $FeTe{0.5}Se{0.5}$ sistemine In katkısının artan oranlarının süperiletkenlik mekanizmasını olumsuz yönde etkilediğini göstermiştir.

Effect of In (up to 5%) addition on Electrical Transport Properties of $FeTe_{0.5}Se{0.5}$ Superconductor System in Single Crystal Form

In this study, structural and electrical transport properties of $FeTe_{0.5}Se{0.5}$ system $(FeTe{0.5}Se{0.5}+%1, FeTe{0.5}Se{0.5}+%3,FeTe{0.5}Se{0.5}+%5)$ fabricated in single crystal form by Self-flux method. Indium, which has a very low melting temperature within the$FeTe_{0.5}Se{0.5}$ system, has been found to act as a flux in crystal formation and exhibits a homogeneous distribution in the structure. However, as the In addition rate increased, the superconducting properties of the $FeTe_{0.5}Se{0.5}$ system changed negatively. According to the addition rates, the best value, Tconset and Tczero values were found as 16.07 K and 14.80 K for sample with 1% In addition. For higher In addition rates, it was found that both values tended to decrease. Upper critical field values were calculated from magnetoresistance curves by Werthamer-Halfand-Hohenberg (WHH) equation and it was found that the best value was for the addition of 1% In, and it was observed that the value decreased for high addition rates. The vortex formation and mobility activation energy determined by Arrhenius equation was found to be 1822, 515, 457 eV for samples with 1%, 3% and 5% In addition at zero Tesla. The obtained results showed that increasing rates of In addition to $FeTe_{0.5}Se{0.5}$ system negatively affect the superconducting mechanism.

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