Ahmet TOMBAK, Yusuf Selim OCAK, Tahsin KILIÇOĞLU

Atmalı DC saçtırma ile hazırlanan Cr/n-Si Schottky engel diyotunun seri direnç ve arayüzey durum yoğunluğu özellikleri

Atmalı DC saçtırma yöntemi ile bir Cr/n–Si Schottky engel diyotu elde edildi. Diyota ait idealite faktörü,engel yüksekliği ve seri direnç gibi elektriksel parametreler Cheung ve Norde tarafından önerilen fonksiyonlarla belirlendi. Diyotun 1,07 idealite faktörü ve 0,60 eV engel yüksekliğine sahip olduğu görüldü.Diyotun arayüzey durum yoğunluk dağılımı akım–gerilim I–V verileri kullanılarak hesaplandı. Ayrıca,diyotun kapasite–gerilim C–V ve kapasite–frekans C–f özellikleri analiz edildi

The series resistance and the interface state density properties of a Cr/n–Si Schottky barrier diode prepared by pulsed DC sputtering

A Cr/n–Si Schottky barrier diode was obtained by pulsed DC sputtering technique. The electrical parametersof the diode such as ideality factor, barrier height and series resistance values were determined using thefunctions proposed by Cheung and Norde. It was seen that the diode has an ideality factor of 1.07 and abarrier height of 0.60 eV. The interface state density distribution of the diode was calculated using thecurrent–voltage I–V data. In addition, the capacitance–voltage C–V and the capacitance–frequency C–f characteristics of the diode were analyzed

Keywords:

Pulsed DC sputtering, Schottky diode Series resistance, Interface state density, Barrier height,

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